S. Pu, F. Yang, N. Zhang, B. T. Vankayalapati and B. Akin, “A Comparative Study on Reliability and Ruggedness of Kelvin and Non-Kelvin Packaged SiC Mosfets,” IEEE Trans. Ind. Appl., vol. 58, no. 3, pp. 3863–3874, May 2022. DOI:10.1109/TIA.2022.3160982

D. R. F. Silva, J. F. Guerreiro, L. B. Spejo and M. V. Puydinger Dos Santos, “Development of a double pulse test plataform for switching loss investigation in emerging SiC MOSFET technology,” in 2024 38th Symposium on Microelectronics Technology and Devices (SBMicro), pp. 1–4, Sep. 2024.DOI:10.1109/SBMicro64348.2024.10673854

F. Yang, S. Pu, B. Akin, S. W. Butler and G. Wang, “Package Degradation’s Impact on SiC MOSFETs Loss: A Comparison of Kelvin and Non-Kelvin Designs,” in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2258–2264, Jun. 2021. DOI:10.1109/APEC42165.2021.9487466

W. Choi, D. Kim, D. Son and S. Kim, “Kelvin Source Package to Maximize 1200V SiC MOSFET Performance in Solar Inverter Applications,” in 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), pp. 1959–1965, May 2023. DOI:10.23919/ICPE2023-ECCEAsia54778.2023.10213545

P. Xue and P. Davari, “The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations,” in 2023 25th European Conference on Power Electronics and Applications (EPE’23 ECCE Europe), pp. 1–8, Sep. 2023. DOI:10.23919/EPE23ECCEEurope58414.2023.10264332

S. A. Rizzo and N. Salerno, “Actual Reasons Involving Turn-Off Losses Improvement With Increasing Load and Gate Resistance in MOSFETs Enhanced With Kelvin Source,” IEEE Trans. Ind. Electron., vol. 71, no. 1, pp. 369–379, Jan. 2024. DOI:10.1109/TIE.2023.3243272

H. Li and S. Munk-Nielsen, “Detail study of SiC MOSFET switching characteristics,” in 2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), pp. 1–5, Jun. 2014. DOI:10.1109/PEDG.2014.6878691

G. P, M. R, R. K. R and R. J. Vijayan, “Characterisation of 1200V, 35A SiC Mosfet using double pulse circuit,” in 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), pp. 1–6, Feb. 2016. DOI:10.1109/PEDES.2016.7914225

Y. Li, Y. Zhang, Y. Gao, S. Du and J. Liu, “Switching Characteristic Analysis and Application Assessment of SiC MOSFET With Common Source Inductance and Kelvin Source Connection,” IEEE Trans. Power Electron., vol. 37, no. 7, pp. 7941–7951, Jul. 2022. DOI:10.1109/TPEL.2021.3139466

Y. Lee and H. Kang, “Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing,” IEEE Trans. Electron Devices, vol. 71, no. 12, pp. 7666–7672, Feb. 2024. DOI:10.1109/TED.2024.3474617

H. Li, X. Liao, Y. Hu, Z. Zeng, E. Song and H. Xiao, “Analysis of SiC MOSFET dI/dt and its temperature dependence,” IET Power Electron., vol. 11, no. 3, pp. 491–500, 2018. DOIi:10.1049/iet-pel.2017.0203