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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.
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  4. 10.5370/KIEE.2019.68.2.310
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References

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Chicot G., Eon D., Rouger N., Oct. 2016, Optimal drift region for diamond power devices, Diam. Relat. Mater, Vol. 69, pp. 68-73DOI
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Umezawa H., Kato Y., Shikata S., May 2015, High temperature operation of diamond power SBD, Proc. 27th Int. Symp. Power Semiconductor Devices & ICs, pp. 187-190DOI
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Kang D. W., Chang H. N., Ha M. W., April 2017, Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage, Jpn. J. Appl. Phys., Vol. 56, pp. 06GE09Google Search
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Chang H. N., Kang D. W., Ha M. W., June 2017, Diamond Schottky barrier diodes with field plate, Trans. Korean Inst. Electr. Eng., Vol. 66, No. 4, pp. 659-665Google Search
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Kim G., Ha M. W., 2018, Modeling of forward characteristics for p-type diamond power devices, KIEE Summer Conf., pp. 916-917Google Search
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