• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
  • COPE
  • kcse
  • 한국과학기술단체총연합회
  • 한국학술지인용색인
  • Scopus
  • crossref
  • orcid

References

1 
H. Niwa, J. Suda, T. Kimoto, "Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation," IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 874-881, 2017. DOI
2 
T. Kimoto, J. A. Cooper, "Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications," Wiley, Piscataway, NJ, USA, pp. 11-37, 2014. DOI
3 
J. A. Cooper, A. Agarwal, "SiC power-switching devices—the second electronics revolution," Proceedings of the IEEE, vol. 90, no. 6, pp. 956-968, 2002. DOI
4 
J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, J. Rebollo, "A Survey of Wide Bandgap Power Semiconductor Devices," IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155-2163, 2014. DOI
5 
K. Jacobs, S. Heinig, D. Johannesson, S. Norrga, H. P. Nee, "Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission," IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8887-8906, 2021. DOI
6 
A. Salemi, H. Elahipanah, B. Buono, A. Hallen, J. U. Hassan, P. Bergman, "Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes," pp. 269-272, IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015. DOI
7 
N. Kaji, H. Niwa, J. Suda, T. Kimoto, "Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics," IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 374-381, 2015. DOI
8 
T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, J. Suda, "Carrier Lifetime and Breakdown Phenomena in SiC Power Device Material," Journal of Physics D: Applied Physics, vol. 51, no. 36, 2018. DOI
9 
X. Xu, L. Zhang, L. Li, Z. Li, J. Li, J. Zhang, P. Dong, "Carrier lifetime modulation on current capability of SiC PiN diodes in a pulsed system," Discover Nano, vol. 18, no. 128, 2023. DOI
10 
G. Y. Chung, M. J. Loboda, S. G. Sundaresan, R. Singh, "Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes," Materials Science Forum, vol. 645-648, pp. 905-908, 2010. DOI
11 
A. Salemi, H. Elahipanah, C. M. Zetterling, M. Ostling, "Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes," Materials Science Forum, vol. 924, pp. 568-572, 2018. DOI
12 
C. D. Matthus, A. Huerner, T. Erlbacher, A. J. Bauer, L. Frey, "Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes," Solid-State Electronics, vol. 144, pp. 101-105, 2018. DOI
13 
S. Fukaya, Y. Yonezawa, T. Kato, M. Kato, "Depth distribution of defects in SiC PiN diodes formed using ion implantation or epitaxial growth," physica status solidi (b), vol. 259, no. 9, 2022. DOI
14 
T. Kimoto, K. Yamada, H. Niwa, J. Suda, "Promise and Challenges of High-Voltage SiC Bipolar Power Devices," Energies, vol. 9, no. 11, pp. 908, 2016. DOI
15 
R. Perez, D. Tournier, A. P. Tomas, P. Godignon, N. Mestres, J. Millan, "Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes," IEEE Transactions on Electron Devices, vol. 52, no. 10, pp. 2309-2316, 2005. DOI
16 
V. Soler, M. Berthou, A. Mihaila, J. Monserrat, P. Godignon, J. Rebollo, J. Millan, "Planar edge terminations for high voltage 4H-SiC power MOSFETs," Semiconductor Science and Technology, vol. 32, no. 3, 2017. DOI
17 
H. Zhou, J. Yan, J. Li, H. Ge, T. Zhu, B. Zhang, S. Chang, J. Sun, X. Bai, X. Wei, "A review of the etched terminal structure of a 4H-SiC PiN diode," Journal of Semiconductors, vol. 44, no. 11, 2023. DOI
18 
N. Yun, W. Sung, "Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices," IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 3826-3832, 2022. DOI
19 
W. Sung, B. J. Baliga, "A Comparative Study 4500-V Edge Termination Techniques for SiC Devices," IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1647-1652, 2017. DOI
20 
T. Dai, L. Zhang, O. Vavasour, A. B. Renz, V. A. Shah, M. Antoniou, "A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices," IEEE Transactions on Electron Devices, vol. 68, no. 3, pp. 1162-1167, 2021. DOI