| Title |
A Study on the Characteristics of Surface Flashover for PCPS |
| Abstract |
A primary limitation of the application of New class of solid state high power, high speed electronic device namely, the Photo-Conductive Power Switch(PCPS) is that the switches flashover at the surface under average applied fields much less than the bulk breakdown field of the semiconductor in most cases. The only way overcome those problem and has a workable compact solid state switch is to passivate the surface by a solid state dielectric material. In this experimentation, The voltage withstands of Silicon is to be severely degraded when operated in vacuum(10[㎸/㎝]) and the performance is improved when operate in air(30[㎸/㎝]), in SF6(80~100[㎸/㎝]). After the passivation, the device had a breakdown field in vacuum and air at a field as high as the unpassivated device in SF6. A experiment results show passivated devices have excellent breakdown field. In this paper, We improved the main properties and mechanism of the silicon breakdown before and after passivation under high field. |