| Title |
The Characteristics of Surface Flashover on the Semiconductor in High Electric - Field |
| Authors |
Se-Hun Lee ; Sik-Chung Lee |
| Abstract |
In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem, to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field, high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that failed at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field. |