| Title |
A New Current Source Modeling of Silicon Bipolar Transistor for Wireless Transceiver Module |
| Keywords |
transceiver module ; BJT modeling ; wireless system |
| Abstract |
Silicon bipolar transistors (Si-BJT) are widely used in the telecommunication system such as short range wireless control and wireless indoor voice communication system. New modeling method for the internal current source model of Si-BJT is proposed. The proposed method based on new thermal resistance extraction method and new analytical expressions for the current source parameters of Si-BJT. The proposed method can directly extract the model parameters without any optimization procedure which is adopted in the conventional modeling method. The proposed method is applied to 5 finger 0.4×20[μm²] and the model shows good prediction of the measured data in 3[%] of errors proving the validity of this method. |