| Title |
Fabrication of GHz-Band FBAR with AlN Film on Mo/SiO₂/Si(100) Using MOCVD |
| Authors |
Chung-Mo Yang; Seong-Kweon Kim ; Jae-Sang Cha ; Ku-Man Park |
| Keywords |
AlN(Aluminim Nirtide) ; MOCVD(Metal-Organic-Chemical-Vapor Deposition) ; Q(Quality Factor) ; keff²(Electromechanical Coupling Coefficient) ; FWHM(Full-Width at Half-Maximum) |
| Abstract |
In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO₂/Si(100) using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[㎓] and 3.224[㎓], respectively. The quality factor and the effective electromechanical coupling coefficient(keff²) were measured with 24.7 and 2.65[%], respectively. The conditions of AlN deposition were substrate temperature of 950[℃], pressure of 20Torr, and Ⅴ-Ⅲ ratio of 25000. A high c-axis oriented AlN film with 4x10??[Ω㎝] resistivity of Mo bottom electrode and 4[°] of AlN(0002) full-width at half-maximum(FWHM) on Mo/SiO₂/Si(100) was grown successfully. The FWHM value of deposited AlN film is useful for the RF band pass filter specification for GHz-band wireless local area network. |