| Title |
Electrical Properties of ITO and ZnO：Al Thin Films and Brightness Characteristics of PDP Cell with ITO and ZnO：Al Transparent Electrodes |
| Keywords |
ITO ; ZnO：Al ; Optical transmittance ; Electrical resistivity ; Transparent conductor ; PDP |
| Abstract |
Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO：Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO：Al films with the optimum growth conditions showed each resistivity of 1.67×10?³[Ω-㎝], 2.2×10?³[Ω-㎝] and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO：Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO：Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of 836[cd/ ㎡] at voltage range of 200～300[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV. |