| Keywords |
Transparent Conducting Layer ; PET Subslrate ; Electrical Resistivity ; Optical Transmittance ; Magnetron Sputtering |
| Abstract |
In this paper aluminium-doped zinc oxied(ZnO:Al) conduction layer was deposited on polytheylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of 1.1×10-3[Ω-cm] was obtained at 5[mTorr] of gas pressure, and 180[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr]. |