| Title |
Molybdeum Oxide Film Preparation by a Magnetic Discharge Sputtering and its Application |
| Authors |
Doo-Hwan Kim ; Cha-Soo Park ; Youl-Moon Sung |
| Keywords |
Magnetic Discharge ; tv10lybdeum Oxide ; Electron Heating ; Erosion ; Arrester ; Uniform Process |
| Abstract |
In this experiment molybdeum oxide(MoO₃) films were prepared by a magnetic null discharge(MND) sputtering system and fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistance of the same with MoO₃ film were about 1.4[㏁] and 800[㏀] under the condition of applied voltage of 400[V]. The preferred orientation in the films changed from(100) to (210) with substrate temperature. Two XPS peaks of the Mo3d photoelectron were detected at the binding energies of 228.9[eV] and 232.4[eV], while the binding energy of the Ols peak was 532.6[eV). The substrate temperature and reactivity gives large effects to the structure and growth of the film and system is also very useful for performing the uniform reactive deposition It can be found from the result of a MoO₃ film deposition that the system is very useful for performing the uniform reactive sputtering. |