| Title |
Electrical Conduction Mechanism of AZO Thin Film and Photo-Electric Conversion Efficiency of Film-Typed Dye Sensitized Solar Cell |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2010.24.4.066 |
| Keywords |
AZO Film ; Lattice Constance ; Biaxial Stress ; XPS Spectra ; Conversion Efficiency |
| Abstract |
In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as 1.8×10-3[Ω?㎝] and 25.5[㎚/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode. |