| Title |
Electrical and Optical Properties of the GZO Transparent Conducting Layer Prepared by Magnetron Sputtering Technique |
| Authors |
Im-Jun No ; Sung-Hyun Kim ; Paik-Kyun Shin ; Kyung-Ill Lee ; Sun-Min Kim ; Jin-Woo Cho |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2010.24.4.110 |
| Keywords |
ZnO ; TCO ; GZO ; Sputtering |
| Abstract |
Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], Ga₂O₃ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[℃], Ar flow rate of 50[sccm], O₂ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of 2.536×10-4[Ω?㎝], a carrier concentration of 7.746×1020[㎝-3], and a carrier mobility of 31.77[㎠/V?S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications. |