| Title |
Fabrication and Characterization of Gate Insulator Thin Films prepared by Plasma Polymerization |
| Authors |
Young-Do Son ; Myung-Whan Hwang ; Jae-Sung Lim ; Paik-Kyun Shin |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2011.25.12.048 |
| Keywords |
Plasma Polymer ; Gate Insulator Thin Film ; Leakage Current Density ; Organic Semiconductor Device |
| Abstract |
Polymer thin films were prepared by capacitively coupled plasma polymerization process for application of gate insulator. The polymer thin films revealed to form polymer layers with original properties of the monomer. Among the plasma polymer thin films, the styrene polymer having large number of phenyl sites revealed higher dielectric constant of k=3.7 than that of conventional polymer. The plasma polymerized styrene thin film revealed no hysteresis characteristics and low leakage current density of 1×10-8[Acm-2] at field strength of 1[MVcm-1], which measured by I-V and C-V measurements using MIM and MIS devices. |