| Title |
Development of PWM Converter System for Sapphire Silicon Ingot Glowing of 80kW 10kA |
| Authors |
Min-Huei Kim ; Young-Sik Park |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2014.28.11.033 |
| Keywords |
Sapphire Silicon Ingot Glowing Converter ; High Frequency Transformer ; H-Bridge Converter ; Center-tapped Transformer Diode Rectifier ; THD |
| Abstract |
This paper is research result for a development of sapphire silicon ingot glowing(SSIG) PWM converter system for 80kW 10kA. The system include 3-phase AC-DC diode rectifier of input voltage AC 380V and 60Hz, DC-AC single phase full bridge PWM inverter of high frequency, AC-DC single-phase full wave rectifier using center-tapped of transformer for low voltage 8.0V and large current 10,000A of output specification, tungsten resistor load 0.1[ｍΩ]. PWM switching frequency for IGBT inverter control set 30kHz. The suggested researching contents are designed data sheets of power converter system, PSIM simulation, operating characteristics and analysis results of developed SSIG system. This paper propose |