| Title |
35mA Bidirectional Current Switching in Two-Terminal Planar Devices Based on Vanadium Dioxide Thin Films Using 976nm Infrared Laser |
| Authors |
Jihoon Kim ; Yong Wook Lee |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2017.31.3.010 |
| Keywords |
Vanadium dioxide ; Thin film ; Metal-insulator transition ; Photothermal effect ; Switching |
| Abstract |
By incorporating a 976nm infrared laser diode (LD), we demonstrated a bidirectional current switching in a two-terminal planar device based on a vanadium dioxide (VO2) thin film. The VO2 thin film was grown on a sapphire (Al2O3) substrate by a pulsed laser deposition method. A bias voltage range for stable switching operation was determined by measuring the current-voltage characteristics of the fabricated device. The bidirectional current switching of up to 35mA was achieved by illuminating a focused laser beam directly onto the exposed film. The transient responses of switched currents were measured while the LD was modulated at a variety of pulse widths and repetition rates of up to 3.0Hz. A switching contrast between off-state and on-state currents was calculated as ∼9333, and the rising and falling times were measured as ∼40 and ∼20ms, respectively. |