| Title |
High Frequency Switching Inverter Using Si and SiC |
| Authors |
Geon-Shin ; Woo-Cheol Lee |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2017.31.11.045 |
| Keywords |
SiC MOSFET ; Si IGBT ; Switching Loss ; High Frequency |
| Abstract |
Generally, Si-based IGBT (Insulated Gate Bipolar Transistor) and MOSFET (MOS Field-Effect Transistor) are used as power switching devices throughout the industry. In recent years, SiC (Silicon Carbide), which is known to have better physical properties and temperature characteristics than Si (Silicon), is increasingly applied to systems to improve the overall performance and reduce loss. Therefore, in this paper, the output waveform characteristics of SiC MOSFET and Si IGBT are compared and analyzed in the single-phase inverter system under the same switching frequency condition. And then, the pattern of the output waveform is compared with according to each frequency by increasing the switching frequency in the system using the SiC MOSFET, which has advantages of high-speed switching than Si, and analyzed the optimal operating condition of the system. |