| Title |
Global Modeling of Ar/CF4 Gas Mixture for Plasma Abatement |
| Authors |
Seung-Gyeum Kim ; Jeong-Hyun Seo |
| DOI |
http://dx.doi.org/10.5207/JIEIE.2018.32.12.061 |
| Keywords |
Ar/CF4 ; CF4 decomposition ; Plasma Simulation ; Discharge |
| Abstract |
In this paper, we investigated the decomposition of CF4, the core gas of global warming, in semiconductor processes using Ar / CF4 gas mixture. We used global modeling to analyze the characteristics of complex gas reactions. The electron density was about 1018～1019/m3 at 100mTorr to 10Torr, and the electron temperature was 3.5～4.5eV. The higher the pressure, the higher the electron density and the lower the electron temperature. Under sufficient conditions to maintain the plasma, CF4 was decomposed 100% and took about 6ms to decompose. In plasma generation and decay process, the pressure of the system greatly influenced the electron temperature and density, and the electron density was most closely related to the decomposition of CF4. After the glow discharge, the CF density was the highest at pressures below 1Torr, but at 10Torr, the CF4 was recovered by more than 10%, showing the highest density. The higher the pressure, the faster the CF3 is recombined with CF4, so it is important to block this recombination process at higher pressures. |