| Title |
Design of the Pulse Controller Inverter Based on GaN HEMT for Short Pulse |
| Authors |
Seung-Hee Lee ; Seung-Ho Song ; Hyun-Bin Jo ; Jae-Beom Ahn ; Hong-Je Ryoo |
| DOI |
http://doi.org/10.5207/JIEIE.2020.34.2.046 |
| Keywords |
Fast Rise Time; Gate Drive Circuit; Pulse Power Supply; Short Pulse Width |
| Abstract |
High voltage pulsed power supply is a device for discharging high energy in a short time and is used to various fields. In particular, pulse characteristic with a short pulse width and fast rise time is required for discharging non-thermal plasma which is applied to the water treatment and gas treatment system. In this paper, for generating a high-voltage short pulse, pulse controller inverter based on wide band gap device is designed to provide fast and short gate signals for pulse discharging switches and the operational principle is analyzed. Pulse controller is designed with simple structure and GaN E-HEMT is utilized as inverter switch for fast characteristics. To verify the operation of the pulse controller inverter and its reliability in arc condition, the experiment was conducted. |