Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. JSTS 2019-04(Vol.19 No.02)
XML PDF INFO REF
Title Xenon Flash Lamp Annealing on a-IGZO Thin-film Transistors at Different Pulse Repetition Numbers
Authors 김기현(Kee Hyun Kim) ; 권혁인(Hyuck-In Kwo)n ; 권상직(Sang Jik Kwon) ; 조의식(Eou-Sik Cho)
DOI https://doi.org/10.5573/JSTS.2019.19.2.178
Page pp.178-183
ISSN 1598-1657
Keywords Xe flash lamp ; annealing ; a-IGZO ; pulse repetition number ; thin-film transistor (TFT)
Abstract Xenon (Xe) flash lamps were applied to the annealing process of amorphous In?Ga?Zn?O (a-IGZO) semiconductor films at room temperature for different pulse repetition numbers, and the results were compared with the conventional annealing process. From the Hall measurement results, the a-IGZO films annealed using Xe flash lamps showed improvements in carrier mobilities similar to a-IGZO films annealed in a conventional vacuum furnace. The Xe flash lamp was also used in the annealing process in the fabrication of a-IGZO thin-film transistors (TFTs). The transfer characteristics of a-IGZO TFTs showed enhanced saturation field-effect mobilities, smaller subthreshold swing, threshold voltage shifts, and higher on?off ratios at higher pulse repetition numbers of the Xe flash lamp. These results showed that the Xe flash lamp has an annealing effect on amorphous oxide semiconductor electronic devices with higher productivities.