Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. JSTS 2020-08(Vol.20 No.04)
XML PDF INFO REF
Title [REGULAR PAPER] A Study on 4H-SiC LIGBT with Dual Emitter for High Voltage Driver IC
Authors (Kyoung-Il Do) ; (Yong-Seo Koo)
DOI https://doi.org/10.5573/JSTS.2020.20.4.343
Page pp.343-348
ISSN 1598-1657
Keywords Dual-emitter; high current driving capability; lateral insulated gate bipolar transistor (LIGBT); silicon carbide (SiC)
Abstract This paper describes a lateral insulated gate bipolar transistor (LIGBT) with dual emitter structure in 4H-silicon carbide (4H-SiC). The electrical characteristics of the dual-emitter LIGBT are better than those of the conventional 4H-SiC LIGBT. The dual-emitter structure has an additional emitter between the emitter and the collector in the conventional LIGBT structure. The addition of the emitter can significantly improve forward voltage drop, on-resistance and current driving characteristics. Experimental results show that the 4H-SiC dual-emitter LIGBT has lower forward voltage drop, lower on-resistance and a higher current driving capability than the conventional 4H-SiC LIGBT.