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Title Silicon-controlled Rectifier-based Electrostatic Discharge Protection Circuit with Additional NPN Parasitic Bipolar Junction Transistor for 5-V Application
Authors (Kyoung-Il Do) ; (Yong-Seo Koo)
DOI https://doi.org/10.5573/JSTS.2021.21.2.101
Page pp.101-108
ISSN 1598-1657
Keywords Electrostatic discharge (ESD); ESD clamp; silicon-controlled rectifier (SCR); holding voltage; trigger voltage
Abstract This paper proposes a novel protection circuit based on a silicon-controlled rectifier (SCR) to prevent electrostatic discharge (ESD) at low voltages. The proposed device consists of an additional NPN parasitic bipolar transistor operated via application of an N+ diffusion region and a well breakdown voltage, to reduce the high trigger voltage caused by the well breakdown voltage of the existing SCR structure. Furthermore, the proposed device exhibits an improved trigger voltage, holding voltage, and dynamic resistance component when compared with existing parasitic PNP bipolar transistors. The proposed ESD protection circuit was manufactured using a 0.18 μm bipolar-CMOS-DMOS; it exhibited a significant improvement in electrical characteristics such as trigger voltage (8.1 V) and holding voltage (3.55 V), according to the results of transmission line pulse measurement. Hence, it is deemed to be suitable for 5-V-class applications.