| Title |
Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates |
| Authors |
(Jun Hyeok Heo) ; (Sang Ho Lee) ; (Jin Park) ; (So Ra Min) ; (Geon Uk Kim) ; (Ga Eon Kang) ; (Jaewon Jang) ; (Jin-Hyuk Bae) ; (Sin-Hyung Lee) ; (In Man Kang) |
| DOI |
https://doi.org/10.5573/JSTS.2023.23.1.17 |
| Keywords |
Gallium nitride (GaN); vertical device; power device; fin structure |
| Abstract |
In this study, the multiple fin-type vertical GaN power transistor based on the GaN-on-GaN were analyzed using the two-dimensional technical computer-aided design (2-D TCAD) simulations. In the field of the electric vehicle systems requiring a high operation voltage of 1,000 V or more, the power devices have a large device area because of the long distance between the gate region and the drain region. This problem can be addressed by using the fin-type vertical GaN power transistor, which can reduce the device area due to its vertical channel. For the high current performance, the multiple fin-type structure was required. Thus, we investigated characteristics depending on the number of fin (Nfin). By comparing the on-state drain currents (Ion), the breakdown voltages (BV), and the on-resistances (Ron) with different Nfin, this study provides an understanding of the electrical properties of the multiple fin-type vertical GaN power transistor affected by Nfin. |