Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. 2023-02 (Vol.23 No.01)
  4. 10.5573/JSTS.2023.23.1.17
XML PDF INFO REF

References

1 
Wang, X., Huang, S., Zheng, Y., Wei, K., Chen, X., Zhang, H., & Liu, X. “Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer.” IEEE Transactions on Electron Devices, vol. 61, no. 5, pp. 1341-1346, May. 2014.DOI
2 
K. Hirama, M. Kasu, and Y. Taniyasu, "RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond." IEEE Electron Device Letters, vol. 33, no. 4, pp. 513-515, Apr. 2012.DOI
3 
Lee, J. H., Park, C., Kim, K. W., Kim, D. S, and Lee, Lee, J. H. "Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate." IEEE Electron Device Letters, vol. 34, no. 8, pp. 975-977, Aug. 2013.DOI
4 
R. Chu., A. Corrion., M. Chen., R. Li., D. Wong., D. Zehnder., B. Hughes., and K. Boutros. "1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance." IEEE Electron Device Letters, vol. 32, no. 5, pp. 632-634, May. 2011.DOI
5 
M. Ishida., T. Ueda., T. Tanaka., and D. Ueda. “GaN on Si technologies for power switching devices.” IEEE Transactions on Electron Devices, vol. 60, no. 10, pp. 3053-3059, Oct. 2013.DOI
6 
M. Wang et al., "900 V/1.6 mΩ⋅cm2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate." IEEE Transactions on Electron Devices, vol. 61, no. 6, pp. 2035-2040, Jun. 2014.URL
7 
U. K. Mishra., P. Parikh., and Yi-Feng Wu., "AlGaN/GaN HEMTs-an overview of device operation and applications." Proceedings of the IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002.DOI
8 
J. A. del Alamo., and E. S. Lee., "Stability and Reliability of Lateral GaN Power Field-Effect Transistors." IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4578-4590, Nov. 2019.DOI
9 
G. Longobardi et al., "Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs." IEEE Electron Device Letters, vol. 35, no. 1, pp. 27-29, Jan. 2014.DOI
10 
J. M. Tirado, J. L. Sanchez-Rojas and J. I. Izpura, "Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices." IEEE Transactions on Electron Devices, vol. 54, no. 3, pp. 410-417, Mar. 2007.DOI
11 
T. Oka., and T. Nozawa., "AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications." IEEE Electron Device Letters, vol. 29, no. 7, pp. 668-670, Jul. 2008.DOI
12 
O. Hilt., A. Knauer., F. Brunner., E. Bahat-Treidel., and J. Würfl., "Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer." 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, pp. 347-350.URL
13 
H. Jiang, Q. Lyu, R. Zhu, P. Xiang, K. Cheng, and K. M. Lau, "1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current." in IEEE Transactions on Electron Devices, vol. 68, no. 2, pp. 653-657, Feb. 2021.DOI
14 
M. Sun, Y. Zhang, X. Gao, and T. Palacios, "High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates." in IEEE Electron Device Letters, vol. 38, no. 4, pp. 509-512, Apr. 2017.DOI
15 
M. Sun, M. Pan, X. Gao, and T. Palacios, "Vertical GaN power FET on bulk GaN substrate." 2016 74th Annual Device Research Conference (DRC), 2016, pp. 1-2.DOI
16 
W. Li and S. Chowdhury, “Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation.” Phys. Status Solidi A, vol. 213, no. 10, pp. 2714-2720, Oct. 2016.DOI
17 
An, H. D., Lee, S. H., Park, J. et al., “Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates.” J. Electr. Eng. Technol, Jun. 2022.DOI
18 
Zhang, X. Y., Yang, L. A., Yang, W. L., Li, Y., Ma, X. H., & Hao, Y. "Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects." Semiconductor Science and Technology, vol. 36, no. 2, 2020.DOI
19 
Mukherjee, M., Mazumder, N., Roy, S. K., & Goswami, K. "GaN IMPATT diode: a photo-sensitive high power terahertz source. " Semiconductor Science and Technology, vol. 22, no. 12, 2007.DOI
20 
Jackson, C. M., Arehart, A. R., Cinkilic, E., McS-kimming, B., Speck, J. S., Ringel, S. A., “Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capaci-tors using optically and thermally based deep level spectroscopies.” Journal of Applied Physics, 133, 204505, 2013.DOI
21 
M. Xiao, T. Palacios and Y. Zhang, "ON-Resistance in Vertical Power FinFETs." in IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3903-3909, Sep. 2019.DOI