| Title |
Design of a Vertical Cylinder GaN Junctionless FET based on its GaN-on-GaN Substrate and Electrical Performance |
| Authors |
(So Ra Jeon) ; (Sang Ho Lee) ; (Jin Park) ; (Ga Eon Kang) ; (Jun Hyeok Heo) ; (Min Seok Kim) ; (Seung Ji Bae,Jeong Woo Hong) ; (In Man Kang) |
| DOI |
https://doi.org/10.5573/JSTS.2023.23.6.359 |
| Keywords |
Gallium nitride (GaN); vertical power transistor; GaN-on-GaN substrate; JLFET |
| Abstract |
This study presents a comparative analysis of the vertical cylinder and fin-type junctionless field- effect transistors (JLFETs) based on GaN-on-GaN substrates using three-dimensional technical computer-aided design (3D TCAD) simulations. The on-current (Ion) values of the vertical cylinder and fin-type JLFETs are 6.45 and 5.63 kA/cm2, respectively. The corresponding off-current (Ioff) of the devices is calculated as 2.51 × 10?10￢ and 9.72 × 10?2￢ A/cm2, respectively. Furthermore, their corresponding Ion/Ioff ratios are 2.57 × 1013 and 5.79 × 104, respectively. Additionally, the Ioff ratio of the devices is 2.58 × 109, and the subthreshold swing (SS) is calculated as 101 and 346 mV/dec, respectively. The static resistance (Ron) and breakdown voltage (BV) represent the figure of merits of the power transistor. Herein, Ron of the vertical cylinder-type device is 0.11 μΩ?cm2, which is lower than 0.62 μΩ?cm2 of the vertical fin-type device, whereas their corresponding BVs are calculated as 2,400 and 2,037 V, respectively. These results show that the BV of the vertical cylinder-type device is ~17.8% higher than that of the vertical fin-type device. Therefore, the vertical cylinder-type GaN JLFET has a higher performance than the vertical fin-type GaN JLFET. Herein, we provide guidance in the designing of high-performance vertical GaN power transistors. |