| Title |
Compact Modeling of a HfO2 Memristor Cell with Dependence on Compliance Current for Large-area Simulations |
| Authors |
(Saurabh Suredra Joshi) ; (Soomin Kim) ; (Chang-Hyun Kim) ; (Seongjae Cho) |
| DOI |
https://doi.org/10.5573/JSTS.2023.23.6.382 |
| Keywords |
Resistive-switching random-access memory (ReRAM); hafnium dioxide; circuit and system simulation; multi-level conductance; compact model |
| Abstract |
As a next-generation memory, resistive random-access memory (ReRAM) is an emerging memory device owing to its high cell scalability suitable to high-density memory array, data nonvolatility, and high operation speeds. A compact model of an ReRAM with HfO2 as the switching layer material is developed for circuit and system-level simulations in this work. The developed model enables higher level simulation tasks not only for the memory cell operations in the highly packed array and but also for describing the synaptic behaviors in the hardware neuromorphic systems. Inherently dynamic cell operation characteristics and cell-to-cell variability are reflected for more accurate higher-level simulations. The model is validated by the device characteristics experimentally obtained in the existing reports. The representation of multi-level conductance values by controlling the compliance current has been fused into the compact model. |