PhanHuu Lam1
NguyenThi Quynh Hoa2
Brito-BritoZabdiel3
MiraFermín3
Llamas-GarroIgnacio3
KimJung-Mu4,†
-
(Institute for Computational Science and Artificial Intelligence and Faculty of Mechanical-Electrical
and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh,
700000, Vietnam)
-
(School of Engineering and Technology, Vinh University, 182 Le Duan, Vinh, 43000, Nghe
An, Vietnam and Department of Electronic Engineering, Jeonbuk National University,
567 Baekje-daero, Jeonju, 54896, Korea)
-
(CTTC, Castelldefels 08860, Spain)
-
(Department of Electronic Engineering, Jeonbuk National University, Jeonju 54896, Korea)
Copyright © The Institute of Electronics and Information Engineers(IEIE)
Index Terms
Spoof surface plasmon polariton, field confinement, transmission line, millimeter-wave
I. INTRODUCTION
Surface plasmon polaritons (SPPs) have attracted consid- erable interest due to potential
applications such as antenna [1], filter [2], sensor [3], transmission line [4], etc, since Hendry et. al. proposed the SPPs structure using sub- wavelength periodic
structures such as grooves and holes [5]. Among the potential applications, transmission line based SPPs have been studied
extensively as one of the most promising candidate for high-speed interconnects [4,6].
Transmission lines (TLs) based on SPPs have been pro- posed by using sub-wavelength
periodic structures such as grooves and holes [7], which are called spoof SPPs. Due to the geometry dependency of the spoof surface
plasmon excitation, the spoof surface plasmon propagation at microwave frequencies
can be realized with implementations such as rectangular grooves [2], T-grooves [4], I-grooves [8], pence-shaped grooves [9]. However, the operating frequency of the spoof SPP based TL is limited by the groove
height, making it challenging to realize a high frequency TL for millimeter-wave operation
using conventional photolithography or machining processes.
In this letter, we report on the high frequency spoof SPP TL implemented with low-cost
fabrication. A significant correlation between groove shapes and field confinement
have been thoroughly investigated, which eventually affects the cut- off frequency
of spoof SPP based transmission line.
II. DESIGN AND METHOD
Fig. 1 shows the structures of the proposed spoof SPP transmission lines (TLs). The structures
consist of a metal strip and a metallic ground plane printed on a dielectric substrate.
The top view of TL structures with the various shapes of the metal strips including
bar, inverted trapezoid and trapezoid, respectively, as shown in Fig. 1(a)-(c). The proposed spoof SPP TLs can be divided into two regions of the conversion
section with length of l1(I and III regions) and the SPP TL with length of l2(II region).
The metal strips are etched onto an Arlon 25 substrate of height (h) 0.76 mm, with
a relative permittivity (${\epsilon}$r ) of 3.38 and a loss tangent (${\delta}$) of
0.018 by using a simple and low cost milling machining method, fabricated structures
are shown in Fig. 1(d)-(g).
Fig. 1. The top-view of the proposed spoof SPP transmission line with various shapes: (a) bar; (b) inverted trapezoid; (c) trapezoid. The fabrication image of (d) the transition region; (e)-(g) transmission line region with different groove shapes magnified at the corresponding region illustrated in Fig. 1(a)-(c).
The proposed structures are designed to operate with transmission characteristics
having high cut-off frequency, with the structure dimensions given by l1= 13.75 mm,
l2= 21.01 mm, d = 8.47 mm, g = 1.32 mm, p = 1.375 mm, i = 0.385 mm, w = 0.385 mm,
and v = 0.99 mm, according to Fig. 1.
We use the commercial software Computer Simulation Technology (CST) Microwave Studio
with eigenmode solver and frequency domain solver to calculate the dispersion di-
agram and evaluate the transmission characteristic of the proposed spoof TL. Furthermore,
to verify the design, the scattering parameter of the fabricated samples are measured
using a network analyzer.
III. RESULT AND DISCUSSION
Fig. 2 depicts the dispersion curves of the spoof TLs with different groove shapes. The
free space light dispersion, or light line is the frequency-wave number dispersion
relation of free space photons, which represented as $\Omega =\mathrm{ck}_{0}~ $ (${\Omega}$
is the angular frequency, k0 is the wavenumber, and c is the speed of light in vacuum). Meanwhile, the frequency
dispersion data is collected using the CST Eigenmode Solver [10]. The detailed simulation setup is shown in Ref. [11]. As seen in Fig. 2, the dispersion curves exhibit the spoof SPP-like behavior, which gradually deviate
from the light-line and then asymptotically approach different cut-off frequencies.
It is clear that the asymptotic frequency of the trapezoid-shaped TL > the asymptotic
frequency of the bar-shaped TL > the asymptotic frequency of the inverted trapezoid-shaped
TL.
Fig. 2. Dispersion diagram of the proposed spoof TL unit cell.
The Fig. 3 shows the electric field energy density for the proposed TLs with different groove
shapes. It is clear that comparing with the bar-shaped TL, the trapezoid-shaped TL
can enhance the field confinement while the inverted trapezoid- shaped TL has reduced
field confinement. This observation shows that the enhanced field confinement are
strongly cor- related to the reduced asymptotic frequency of the spoof TL. The spoof
SPP structure with lower asymptotic frequency exhibits tighter field confinement [8].
Fig. 3. (a) Simulated electric field energy density on the surface at 28 GHz of bar-shaped; (b) inverted trapezoid-shaped; (c) trapezoid-shaped spoof TL unit cell.
To verify the transmission characteristics of the proposed spoof TL, the simulated
and measured reflection coefficient (S11) and transmission coefficient (S21) are investigated
as shown in Fig. 4. The simulated cut-off frequencies (-3 dB) of the proposed TLs with bar, inverted
trapezoid, and trapezoid groove shapes are 35.9~GHz, 30.6 GHz, and 40.1 GHz. Com-
pared with simulated results, the measured cut-off frequency of the proposed TLs trend
to increase due to the fabrication error. These observations confirm that the spoof
TL with tighter field confinement realized the lower cut-off frequency. This is consistent
with the theoretical prediction as shown in Fig. 2. Furthermore, the measured loss of the proposed TLs increased at higher frequencies
above 10 GHz compared with the simulated loss of the TLs. This can be explained by
the increase of loss tangent of the substrate with increasing the frequency to higher
region (above 10 GHz). The measured insertion loss per unit length at 28 GHz for the
bar-shaped, inverted trapezoid-shaped, and trapezoid-shaped TLs is 0.084 dB/mm, 0.081
dB/mm and 0.074 dB/mm, respectively.
Fig. 4. Simulated and measured S-parameter of the proposed spoof TL with different groove shapes: (a) bar; (b) inverted trapezoid; (c) trapezoid.
To visualize the high frequency operation of the proposed spoof SPP TLs, the electric-field
distributions at various frequencies of 10 GHz, 28 GHz, and 40 GHz are simulated along
the propagation direction, as depicted in Fig. 5. The proposed spoof SSP TLs allow propagation with high efficiency at high frequencies,
inside the usable bandwidth. Furthermore, the stop-band characteristic at frequencies
above the cut-off frequency can be seen in Fig. 5(c) and (i).
Fig. 5. Simulated electric field distributions 0.15 mm under the structure surface at different frequencies of 10 GHz, 28 GHz, and 40 GHz for the proposed spoof SSP TLs with (a)-(c) bar-shaped grooves; (d)-(f) inverted trapezoid-shaped grooves; (g)-(i) trapezoid-shaped grooves, respectively.
To gain insights into the effect of groove shapes on field confinement and transmission
characteristics, the simulated electric field distribution at the cross section of
the spoof SPP TLs and normal microstrip line at 28 GHz have been investigated as shown
in Fig. 6. The electric field of the proposed spoof SPP TLs occurs denser around the surface
than that of the normal microstrip line. Furthermore, to quantitatively analyze the
confinement phenomena of the proposed spoof SPP TLs and normal microstrip line, the
distributions of electric field amplitudes in the cross-section located 0.15 mm below
the surface, on the surface, and 0.15 mm above the surface, along the y-axis direction
are gathered as illustrated in Fig. 7. As seen in Fig. 7, the magnitude of electric field exponential decay along the y-axis direction, indicating
the occurring of the confinement effect of SPP modes. The electric field peak value
of the proposed spoof SPP TLs is higher than that of the normal microstrip line that
further confirms the stronger electric field confinement of spoof SPP TLs. Furthermore,
the electric field distribution curve shows that the electric field concentrates mainly
at the outer side of the near top edge grooves of the spoof SPP TLs. Higher electric
field peak and stronger field confinement occurs in the inverted trapezoid- shaped
spoof SPP TLs, resulting in reduced cut-off frequency due to the capacitance increase
in the LC resonant circuit. Meanwhile, the peaks of the trapezoid-shaped TLs in this
region are lower than the bar-shape TL, indicating the lower field confinement and
higher cut-off frequency.
Finally, the performance of our structure is compared with existing spoof SPP TL
structures. Table 1 exhibits the spoof SPP TL properties in terms of shape structure, operating frequency,
total length, and insertion loss. As seen in Table 1, the proposed structure achieves the high frequency and compact total length while
keeping a moderate insertion loss.
Fig. 6. The simulated cross section electric-field distributions at 28 GHz in the groove center of the proposed spoof SPP TLs with (a) bar-shaped grooves, inverted trapezoid-shaped grooves; (c) trapezoid-shaped grooves; (d) normal microstrip line.
Fig. 7. Simulated cross-section electric field distributions on the YZ plane of the spoof TL structures located: (a) 0.15 mm below the spoof surface, on the spoof surface; (c) 0.15 mm above the spoof surface.
Table 1. Performance comparison with existing structures
Ref
|
Structure
|
Operating frequency (GHz)
|
Total
Length
(mm)
|
Insertion Loss (dB)
(Loss per unit length)
|
[10]
|
Zigzag grooves
|
12-18
|
86.5 (4.33${\lambda }_{c}^{\mathrm{*}}$)
|
1.5 (0.35 dB/$\lambda _{c}$) at 18 GHz
|
[12]
|
Rectangular- shape
|
12-18
|
50 (2.5$\lambda _{c}$)
|
3.5 (1.4 dB/$\lambda _{c}$) at 17.9 GHz
|
[4]
|
T-shaped Double strip
|
0-40
|
50 (3.33$\lambda _{c}$)
|
4.6 (1.38 dB/$\lambda _{c}$) at 35 GHz
|
This work
|
Bar-shape
|
0-35.9
|
48.51 (2.9$\lambda _{c}$)
|
4.07 (1.4 dB/$\lambda _{c}$) at 28 GHz
|
Inverted trapezoid-shape
|
0-30.6
|
48.51 (2.47$\lambda _{c}$)
|
3.92 (1.59 dB/$\lambda _{c}$) at 28 GHz
|
Trapezoid-shape
|
0-40
|
48.51 (3.23$\lambda _{c}$)
|
3.58 (1.11 dB/$\lambda _{c}$) at 28 GHz
|
* $\lambda _{c}$ is determined at the center frequency of the operating frequency.
IV. CONCLUSION
A high frequency TL based on spoof surface plasmon transmission is proposed. The transmission
characteristic of the proposed TLs is investigated using a numerical method, which
is also verified by measurement result, indicating that the proposed spoof SPP TLs
can operate up to above 28 GHz. By tailoring the different groove shapes of bar, inverted
trapezoid and trapezoid which arranged periodicity along the TL, the proposed TL can
realize higher field confinement or higher cut-off frequency. Compared with the bar-shaped
TL, the inverted trapezoid-shaped TL exhibited enhanced field confinement. Meanwhile,
the cut-off frequency of the proposed TL using the trapezoid shape significantly increased
up to 40 GHz. Due to excellent features such as low-cost, ease of fabrication, and
good operating characteristics, this design is a promising candidate for millimeter-wave
devices.
ACKNOWLEDGMENTS
This paper was supported by research funds of Jeonbuk National University in 2022
and National Research Foundation of Korea (NRF) grant by the Korea government (MSIT)
(No. 2021R1A4A1032234). Project PID2020-113832RBC22 (ORIGIN)/AEI/10.13039/501100011033
from the Spanish government and project 2021 SGR 00772 from the Department of Research
and Universities of the Generalitat de Catalunya.
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Huu Lam Phan was born in Ha Tinh province, Viet Nam in 1993. He received the B.S.
degree from the School of Electronics and Tele-communications, Vinh University, Nghe
An, Vietnam, in 2016. He obtained his PhD degree from University of Ulsan, Korea.
Currently, he works at Van Lang university. His current research interests include
metasurfaces-based polarization con verters and absorbers, and metalens.
Thi Quynh Hoa Nguyen is an associate professor at Vinh University. She obtained
her PhD degree in Materials Engineering from Chungnam National University, Korea,
in 2009. Her research interest is syn thesis and application of advanced functional
materials into electronic, energy, and RF/microwave devices.
Zabdiel Brito-Brito received the Ph.D. degree in Signal Theory and Communications
from the Universitat Politècnica de Catalunya (UPC), Barcelona, Spain, in 2010 (Excellent
Cum Laude). He is a Researcher at the Centre Tecnològic de Telecomunicacions de Catalunya
(CTTC) since 2020. His research interest is to design, manufacture and test planar
and 3D microwave circuits, including wireless communication devices and sensing technology
using microwave signals. He developed microwave wireless planar sensors, including
design and fabrication using nanotechnology, electroplating and lithography, and testing
at the laboratory using network analyzers, anechoic chamber, and oscilloscopes. He
has participated in projects funded by: AGAUR (Generalitat de Catalunya, Spain), MEC
(Ministry of Education, Spanish Government), Intel Corporation Systems Research Center
Mexico, COECYTJAL (Jalisco Government, México), a CTTC internal competitively awarded
project and for the Horizon Europe JU-SNS, STREAM-B-01-05, where the CTTC is the project
coordinator.
Fermín Mira was born in Elda, Spain, on April 19, 1976. He received the Telecommunications
Engineering degree and the PhD degree in Telecommunications from the Technical University
of Valencia in 2000 and 2005, respectively. In 2001, he joined the Department of Electronics,
University of Pavia, Italy, where he was a Pre-Doctoral Fellow (2001-2004) involved
with a research project financed by the European Community under the framework of
a Maricurie Action of the 5th Program Marco “Millimeter-Wave and Microwave Components
Design Framework for Ground and Space Multimedia Network (MMCODEF).” In May 2004,
he joined the Department of Communications, Technical University of Valencia, working
toward his PhD degree. In January 2006 he joined the CTTC as a researcher. His main
activity is focused on the design, fabrication and measurement of microwave devices,
especially filters and antennas in planar and SIW technologies. This activity is applied
to industrial and public founded projects. Other activities include the development
of software for connected cars and study of Internet of Things communications technologies.
Ignacio Llamas-Garro is an expert in the field of device engineering and implementation
from design to fabrication and testing, applied to wireless communications and sensors,
including RF and microwave circuits, reconfigurable designs using microelectromechanical
systems and semiconductor diode-based components. Micromachined devices, 3D printing
of microwave passive components, inkjet printing of planar circuits and sensors, and
micro/nano fabricated optical sensors. Obtained his Ph.D. from the University of Birmingham,
United Kingdom in 2003, and has been with the CTTC since 2010. Previous appointments
include a postdoctoral stay at the Inter-University Semiconductor Research Center,
followed as a BK-21 Assistant Professor at the School of Electrical Engineering and
Computer Science at Seoul National University, Korea. He was an Associate Professor
with the Large Millimeter Telescope at the National Institute for Astrophysics, Optics
and Electronics INAOE, Mexico, and a Juan de la Cierva Fellow with the Signal Theory
and Communications Department at the Universitat Politècnica de Catalunya UPC, Barcelona.
Co-general chair of the 20th SBMO/IEEE MTT-S International Microwave and Optoelectronics
Conference in 2023.
Jung-Mukim was born in Jeonju, Korea, in 1977. He received a B.S. degree in electronicengineering
from Ajou University, Suwon, Korea, in 2000, M.S. and PhD degrees in electrical engineering
and computer science from Seoul National University, Seoul, Korea, in 2002 and 2007,
respectively. From 2007 to 2008, he was a Postdoctoral Fellow at University of California,
San Diego. In 2008, he joined the faculty of the Division of Electronic Engineering,
Jeonbuk National University, Jeonju, where he is currently a full professor. His research
interests include the IMU, SPR sensor, RF MEMS for 5G and ink-jet printing, and 3D
printing-based printed electronics.