Mobile QR Code QR CODE

  1. (Electronic Engineering Department, Kyung Hee University, Yongin-si, Gyeonggi-do 17104, Republic of Korea)



Circulator IC, linear periodic time variation, non-reciprocal, staggered commutation network

I. INTRODUCTION

In electronics, passive elements such as resistor, inductor, and capacitor are characterized as linear, time-invariant, and reciprocal. This reciprocity arises from their fabrication using conventional material that possess symmetric permittivity and permeability tensors. Traditionally, in wireless component design, the breaking of Lorentz reciprocity has been achieved by utilizing ferrite material with an external magnetic field bias, as seen in devices like isolators and circulators. However, ferrite-based devices are bulky and incompatible with CMOS IC fabrication, which limits their effectiveness. Additionally, the antenna interface for full-duplexing wireless communication system is crucial and can be realized through various means such as antenna pairs [1], shared antenna interfaces like the electrical balance duplexer [2] or circulator [3].

This study focuses on effectively integrating the circulator device into the CMOS system. Nonreciprocal passive circulators employing ferrite materials [4] have demonstrated excellent performance in terms of high linearity and low loss. However, they are not amenable to CMOS technology for integration. Furthermore, circulators that utilize the nonreciprocity of active transistors [3,5] suffer from high noise and poor linearity [6]. Nonlinear approaches have also been explored in optical communication systems [7], but they lead to a limited input power range and suffer from dynamic reciprocity [8]. Therefore, the need for a circulator with low noise, high linearity, and high isolation remains an ongoing challenge to researchers.

Linear periodically time-varying (LPTV) circuits have emerged as a solution to address the challenges of achieving magnet-less non-reciprocity. These circuits offer the potential for high performance, low cost, and compact size. Recent research has explored the development of magnetic-free non-reciprocal circulators based on staggered commutation with all-pass filter type [9] or N-path BPF type [10] networks.

In this work, we present a fully integrated circulator IC including not only multi-path staggered commutation networks but also artificial lumped-element transmission lines, which results in ultra-compact solution.

II. DESIGN AND ANALYSIS

To design a fully integrated circulator in CMOS technology, we used linear periodic time-variant (LPTV) property of band-pass filter (BPF) type gyrator in a staggered commutation network which was implemented in N-path switched capacitor array.

A. BPF type gyrator

Fig. 1 shows a two-port commutated N-path switched-capacitor network realized by using $N$ identical branches of a switch-capacitor-switch structure. The output switches are delayed with respect to the input set by $\Delta T > T_{s}/N$, where the value of $N$ is the number of the path and $T_{s}$ is the switching period. This network subjected to spatial-temporal modulation, can operate as a bandpass filter (BPF). The duration during which each switch is closed should be significantly shorter than the time constant of the shunt capacitor, $\tau \gg T_{s}/N$ [11]. Increasing N enhances the filter performance [12]. In this work, considering the circuit complexity and loss, the network was designed with four paths.

Fig. 2 shows a four-path two-port BPF-based gyrator using NMOS switches. The capacitance was chosen to satisfy the condition of the bandpass filtering characteristic, $C \gg 1/(2\pi\cdot f_{s}\cdot Z_{0})$, where $f_{s}$ is the operation frequency and $Z_{0}$ is the characteristic impedance of the system. The switches were driven by clocks having four phases with the duty cycle of 25%. Two clock sets (LO a$<1:4>$ and LO b$<1:4>$) had the phase shift of $90^\circ$. The switch design was optimized considering on-resistance and parasitic capacitance.

The complete $S$-parameter of the gyrator can be expressed as [6]

$ S(f_{{\rm S}})=\left[\begin{array}{cc} {{\rm sinc}^{2} \left(\frac{\pi }{4} \right)-1} & {{\rm sinc}^{2} \left(\frac{\pi }{4} \right){\rm e}^{\frac{{\rm -j\pi }}{2} } } \\ {{\rm sinc}^{2} \left(\frac{\pi }{4} \right){\rm e}^{\frac{{\rm +j\pi }}{2} } } & {{\rm sinc}^{2} \left(\frac{\pi }{4} \right)-1} \end{array}\!\!\right]. $

The $S$-parameter matrix reveals that the magnitudes of ${S}_{12} $and ${S}_{21}$ are reciprocal, but their phases are non-reciprocal. Fig. 3 shows magnitude and phase response with S-parameter simulations. In Fig. 3(a), the gyrator exhibits a bandpass filter characteristic with the insertion loss of 5 dB and return loss of -15 dB. Fig. 3(b) illustrates the approximate phase difference of $175^\circ$ between $S_{21}$ and $S_{12}$.

Fig. 1. Commutated multipath network.

../../Resources/ieie/JSTS.2025.25.2.184/fig1.png

Fig. 2. BPF type gyrator.

../../Resources/ieie/JSTS.2025.25.2.184/fig2.png

Fig. 3. Simulated results of S-parameters of gyrator.

../../Resources/ieie/JSTS.2025.25.2.184/fig3.png

B. Clock Signal Generator

To provide the required clock signals to the switches, a voltage-controlled oscillator (VCO) was designed for clock signal generation. Fig. 4 shows the circuit topology of the VCO. The VCO consists of a PMOS cross-coupled pair, a capacitor bank digitally controlled by three bits for coarse-tuning, and a varactor bank for analog fine-tuning. The PMOS cross-coupled pair was chosen for low phase-noise characteristic. The isolated bulk terminals and the low mobility of holes of PMOS devices result in inherently less thermal and flicker noise contribution than NMOS devices [13]. The VCO was designed with a supply voltage of 1.2 V and current consumption of 6 mA. The simulation results show the center frequency of 9.6 GHz, the phase noise of -106 dBc/Hz at the offset frequency of 100 kHz, and the tunning range of 590 MHz with controlled voltages from 0 to 1.2 V.

To design 2.4 GHz clock signals with the duty cycle of 25%, the conventional Johnson-counter-based dividers were employed as shown in Fig. 5. The divide-by-4 dividers were designed with high-speed D flip-flops. Because the clock signals were required to drive large NMOS switches in commutated paths, several buffers were placed right before the switches. To achieve staggered commutation operation for phase non-reciprocity, the delay of $90^\circ$ degree between LO a$<1:4>$ and LO b$<1:4>$ was designed by a digitally-controlled delay line (DCDL) for the coarse-tuning step, and then an analog varactor bank was utilized for fine-tuning. Fig. 6 shows the NAND-based telescopic 5-stage DCDL.

Fig. 4. Configuration of VCO.

../../Resources/ieie/JSTS.2025.25.2.184/fig4.png

Fig. 5. Configuration of divide-by-4 divider.

../../Resources/ieie/JSTS.2025.25.2.184/fig5.png

Fig. 6. Configuration of DCDL.

../../Resources/ieie/JSTS.2025.25.2.184/fig6.png

Table 1 summarizes the design parameters.

Table 1. Design parameter summary.

Block

Parameter

Value

BPF type Gyrator

Operating frequency

2.4 GHz

W/L of NMOS switch

250 nm/30 nm

Capacitor in N-path

16 pF

Artificial

Transmission Line

Inductor

3 nH

Capacitor

1.9 pF

Clock Generator

VCO center frequency

9.6 GHz

VCO tunning range

590 MHz

VCO phase noise

at 1MHz offset

-105 dBc/Hz

DCDL delay time

100 ps

III. IMPLEMENTATION AND MEASUREMENT

The circulator IC was implemented using Samsung 28 nm RF CMOS process. Fig. 7 shows the block diagram of the overall circulator. It consists of three subblocks: lumped-element transmission lines, a four-path two-port BPF type gyrator, and a clock signal generator. The size of the fully integrated transmission lines was miniatured by using high-pass filter type capacitor-inductor-capacitor (C-L-C) network with on-chip metal-insulator-metal (MIM) capacitor and spiral inductor. The inductor was implemented on the top metal layer of thick copper with the inductance of 3 nH. The capacitance was chosen to be 1.9 pF. In the gyrator, the width and length of the NMOS devices were 200 $\mu$m and 0.1 $\mu$m, respectively. The capacitance between the switches was designed to be 16 pF. Fig. 8 shows the microphotograph of the fabricated chip. The overall size is 970 $\mu$m $\times$ 960 $\mu$m excluding all the bonding pads.

Fig. 9 shows the measured S-parameters with simulation results. Simulations were conducted under not only typical condition (plotted by black and thick lines) but also variation of process, voltage, and temperature (PVT) including CMOS corners of slow, nominal, and fast conditions; supply voltage change by 10%; and temperature range from -$30^\circ$C to $80^\circ$C (plotted by gray and thin lines).

Fig. 7. Overall block diagram of the fully integrated circulator.

../../Resources/ieie/JSTS.2025.25.2.184/fig7.png

Fig. 8. Photograph of the circulator IC.

../../Resources/ieie/JSTS.2025.25.2.184/fig8.png

Fig. 9. Measured and simulated results of S-parameters of implemented circulator.

../../Resources/ieie/JSTS.2025.25.2.184/fig9.png

Fig. 10. Measured results of noise-figures of implemented circulator.

../../Resources/ieie/JSTS.2025.25.2.184/fig10.png

The measured circulator characteristics are shown in the narrowband near 2.4 GHz. Among three ports, in the frequency range of 2.39-2.4 GHz, the measured insertion losses are in the range of 4.5-5.5 dB (about 1-2 dB worse than the simulation), while the maximum isolation features are in the range of 35.7-44.8 dB (about 5-8 dB worse than the simulation). These discrepancies are primarily attributed to parasitic components in the devices which could not predict in the simulation because of the device modeling limitation. The large signal performance was measured at the frequency of 2.4 GHz among three ports. IP1dBs were 18.2 dBm (port1-port2), 18.5 dBm (port2-port3), and 16.3 dBm (port1-port3). The measured minimum noise-figures were 6.1 dB (port1-port2), 5.8 dB (port2-port3), and 9.8 dB (port1-port3) within the frequency range of 2.39-2.4 GHz as shown in Fig. 10. The performance between port1 and port3 is the worst because the gyrator circuit is located in the path. The circulator IC consumes 7.2 mW for the VCO block and 14.4 mW for the dividers and DCDL block.

Table 2 compares our proposed circulator IC with other designs reported in the literature. Compared to the circulators employing staggered commutation through filters [9,10], integration condition should be considered. The circulator in [9], which relies on external clock signals, shows worse maximum isolation performance by 17.7-35.3 dB than this work. Similarly for the circulator in [10], which used not only external clock signals but also off-chip components to implement transmission lines, the circulator in this work shows lower power consumption by 69%. When this work is compared with fully integrated circulators [14,15], the presented circulator shows better characteristics than the active quasi-circulator [14] in terms of insertion loss, isolation, power dissipation, and size. Even if the integrated transmission lines on the insulator substrate in [15] resulted in slightly better insertion loss by 1.5-2.4 dB, the chip size and power dissipation were significantly larger than our design.

Table 2. Comparison with previously reported circulator IC.

Ref.

CMOS

tech.

Circulator

configuration

Freq.

(GHz)

Magnitudes of S-parameters (dB)

Power diss.(mW)

Chip size

(mm2) **

Integration details

S21

S32

S13

S12

S23

S31

[9]

40nm

All-pass filter

6.5

-5.5*

-2.5*

-2.5*

-18*

-9.5*

-9.5*

12.4

0.45*

External clock

[10]

65nm

N-path BPF

0.75

-2.5*

-3*

-4.5*

-45*

-45*

-50*

70*

0.64

External clock and off-chip inductors

[14]

180nm

Active quasi

1-7

-10

-9

n.a.

-15

-30

-36

25.2

1.47*

Fully integrated

[15]

180nm SOI

Switched TL

0.95

-2.1

-2.9

-4*

-10*

-15*

-50*

170

16.5

Fully integrated

This work

28nm

N-path BPF

2.4

-4.5

-4.9

-5.5

-35.7

-40.3

-44.8

21.6

0.93

Fully integrated

$^*$ Extracted from the figures in the paper, $^{**}$all pads excluded, TL: transmission line

IV. CONCLUSION

In this work, we have presented the fully integrated non-magnetic CMOS circulator IC based on a four-path BPF type staggered commutation network. Even if it provides slightly large loss because of full integration including lumped-element transmission lines, it shows good isolation performance among ports as well as an ultra-compact size.

ACKNOWLEDGMENTS

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No.RS-2022-NR069397). The chip fabrication and EDA tool were supported by the IC Design Education Center (IDEC), Korea.

References

1 
T. Dinc and H. Krishnaswamy, ``A T/R antenna pair with polarization-based reconfigurable wideband self-interference cancellation for simultaneous transmit and receive,'' Proc. of 2015 IEEE MTT-S International Microwave Symposium, IMS 2015, pp. 8-11, 2015.DOI
2 
M. Elkholy, M. Mikhemar, H. Darabi, and K. Entesari, ``Low-loss integrated passive CMOS electrical balance duplexers with single-ended LNA,'' IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 5, pp. 1544-1559, 2016.DOI
3 
S. Wang, C. H. Lee, and Y. Bin Wu, ``Fully integrated 10-GHz active circulator and quasi-circulator using bridged-T networks in standard CMOS,'' IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 10, pp. 3184-3192, 2016.DOI
4 
D. M. Pozar, Microwave Engineering, Wiley, 2011.URL
5 
K. O. S. Tanaka, N. Shinmomura, ``Active circulators-The realization of circulators using transistors,'' Proceedings of the IEEE, vol. 53, no. 3, pp. 260-267, 1965.DOI
6 
N. Reiskarimian and H. Krishnaswamy, ``Magnetic-free non-reciprocity based on staggered commutation,'' Nature Communications, vol. 7, 11217, Apr. 2016.DOI
7 
D. L. Sounas, J. Soric, and A. Alù, ``Broadband passive isolators based on coupled nonlinear resonances,'' Nature Electronics, vol. 1, no. 2, pp. 113-119, 2018.DOI
8 
N. Reiskarimian, T. Dinic, J. Zhou, T. Chen, M. B. Dastjerdi, and J. Diakonikolas, ``One-way ramp to a two-way highway,'' IEEE Microwave Magazine, vol. 20, no. 2, pp. 56-75, 2019.DOI
9 
A. Ruffino, Y. Peng, F. Sebastiano, M. Babaie, and E. Charbon, ``A wideband low-power cryogenic CMOS circulator for quantum applications,'' IEEE Journal of Solid-State Circuits, vol. 55, no. 5, pp. 1224-1238, 2020.DOI
10 
N. Reiskarimian, J. Zhou, and H. Krishnaswamy, ``A CMOS passive LPTV nonmagnetic circulator and its application in a full-duplex receiver,'' IEEE Journal of Solid-State Circuits, vol. 52, no. 5, pp. 1358-1372, 2017.DOI
11 
M. Tymchenko, D. Sounas, A. Nagulu, H. Krishnaswamy, and A. Al\`{u}, ``Quasielectrostatic wave propagation beyond the delay-bandwidth limit in switched networks,'' Physical Review X, vol. 9, no. 3, 31015, 2019.DOI
12 
A. Ghaffari, E. A. M. Klumperink, M. C. M. Soer, and B. Nauta, ``Tunable high-Q N-path band-pass filters: Modeling and verification,'' IEEE Journal of Solid-State Circuits, vol. 46, no. 5, pp. 998-1010, 2011.DOI
13 
M. Haase, V. Subramanian, T. Zhang, and A. Hamidian, ``Comparison of CMOS VCO topologies,'' Proc. of 6th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2010, pp. 1-4, 2010.URL
14 
B. Tang, X. Gui, J. Xu, Q. Xia, and L. Geng, ``A dual interference-canceling active quasi-circulator achieving 36-dB isolation over 6-GHz bandwidth,'' IEEE Microwave and Wireless Components Letters, vol. 29, no. 6, pp. 409-411, 2019.DOI
15 
A. Nagulu and H. Krishnaswamy, ``Non-magnetic CMOS switched-transmission-line circulators with high power handling and antenna balancing: Theory and implementation,'' IEEE Journal of Solid-State Circuits, vol. 54, no. 5, pp. 1288-1303, 2019.DOI
Quang-Huy Do
../../Resources/ieie/JSTS.2025.25.2.184/author1.png

Quang-Huy Do received his B.S. degree in mechatronics engineering from Hanoi University of Science and Technology (HUST), Hanoi, Vietnam, in 2020. He is currently pursuing a Master-Ph.D. degree at the High-Speed Semiconductor Circuit Laboratory, Department of Electronic Engineering, Kyung Hee University, Yongin, South Korea. His current research interests include high-frequency IC design.

Tan-Binh Ngo
../../Resources/ieie/JSTS.2025.25.2.184/author2.png

Tan-Binh Ngo received his B.S. degree in electronics telecommunications engineering from the Ho Chi Minh University of Technology, Ho Chi Minh City, Vietnam, in 2016. From 2016 to 2018, he was an analog mix-signal circuit designer with Uniquify Inc., where he worked on SRAM and IO interface circuits for high-speed DRAM product. As of March 2018, he has been pursuing a Master-Ph.D. degree at the High-Speed Semiconductor Circuit Laboratory, Department of Electronic Engineering, Kyung Hee University, Yongin, South Korea. His current research interests include high-speed memory interface designs, RF circuits for wireless power transfer system and non-foster elements as well as non-reciprocal circuits for RFIC applications.

Sang-Woong Yoon
../../Resources/ieie/JSTS.2025.25.2.184/author3.png

Sang-Woong Yoon received his B.S. degree from Yonsei University, Seoul, South Korea, in 1998, an M.S. degree in electrical engineering from the Korea Advanced Institute of Science and Technology, Daejeon, South Korea, in 2001, and a Ph.D. degree in electrical and computer engineering from the Georgia Institute of Technology, Atlanta, GA, USA, in 2004. From 2005 to 2006, he was a Senior Design Engineer with RF Micro Devices, Billerica, MA, USA. From 2006 to 2007, he was with Marvell Semiconductor Inc., Santa Clara, CA, USA. In 2007, he joined Kyung Hee University, Yongin, South Korea, as a Faculty Member. He has authored or coauthored over 49 papers in referred international journals and conference proceedings. His current research interests include analog/RF IC design and RF module design in advanced integration technologies.