Mobile QR Code QR CODE

“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.

Journal Search

  1. Home
  2. Archive
  3. 2019-04 (Vol.19 No.02)
  4. 10.5573/JSTS.2019.19.2.190
XML PDF INFO REF

REFERENCES

1 
Novoselov K. S., et al , Oct. 2004, Electric field effect in atomically thin films, Science, Vol. 306, No. 5696, pp. 666-669DOI
2 
Berger C., et al , May 2006, Electronic confinement and coherence in patterned epitaxial graphene, Science, Vol. 312, No. 5777, pp. 1191-1196DOI
3 
Eda G., et al , May 2008, Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material, Nature Nanotechnology, Vol. 3, No. 5, pp. 270-274DOI
4 
Li X., et al , Jun. 2009, Large-area synthesis of high-quality and uniform graphene films on copper foils, Science, Vol. 324, No. 5932, pp. 1312-1314DOI
5 
Kim K. S., et al , Feb. 2009, Large-scale pattern growth of graphene films for stretchable transparent electrodes, Nature, Vol. 457, No. 7230, pp. 706-710DOI
6 
Yang H., et al , Jun. 2012, Graphene barristor, a triode device with a gate-controlled Schottky barrier, Science, Vol. 336, No. 6085, pp. 1140-1143DOI
7 
Lee J. H., et al , Apr. 2014, Reliability enhancement of germanium nanowires using graphene as a protective layer: Aspect of thermal stability, ACS Applied Materials and Interfaces, Vol. 6, No. 7, pp. 5069-5074DOI
8 
Ambrosi A., et al , Jan. 2014, The CVD graphene transfer procedure introduces metallic impurities which alter the graphene electrochemical properties, Nanoscale, Vol. 6, No. 1, pp. 472-476DOI
9 
Yu E., et al , Apr. 2018, Ultrathin SiGe shell channel p-Type FinFET on bulk Si for sub-10-nm technology nodes, IEEE Transaction on Electron Devices, Vol. 65, No. 4, pp. 1290-1297DOI
10 
Carlin J. A., et al , Apr. 2000, Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates, Applied Physics Letters, Vol. 76, No. 14, pp. 1884-1886DOI
11 
Ferrari A. C., Jul. 2007, Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects, Solid State Communications, Vol. 143, No. 1-2, pp. 47-57DOI
12 
Tai L., et al , Jun. 2018, Direct growth of graphene on silicon by metal-free chemical vapor deposition, Nano-Micro Letters, Vol. 10, No. 2, pp. 10-20DOI
13 
Lee J. H., et al , Apr. 2014, Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium, Science, Vol. 344, No. 6181, pp. 286-289DOI
14 
Scace R. I., et al , Jun. 1959, Solubility of carbon in silicion and germanium, The Journal of Chemical Physics, Vol. 30, No. 6, pp. 1551-1555DOI
15 
Walther T., et al , June. 1997, Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy, Applied Physics Letters, Vol. 71, No. 6, pp. 809-811DOI
16 
Goeller P. T., et al , Nov. 1999, Germanium segregation in the Co/SiGe/Si(001) thin film systems, Journal of Materials Research, Vol. 14, No. 11, pp. 4372-7484DOI