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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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  4. 10.5573/JSTS.2019.19.6.571
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REFERENCES

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Oh Dongyean, , A new self-boosting phenomenon by soure/drain depletion cut-off in NAND flash memory., 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop. IEEEDOI
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Lee Jae-Duk, 2006, A new programming disturbance phenomenon in NAND flash memory by source/drain hot-electrons generated by GIDL current., 2006 21st IEEE Non-Volatile Semicon-ductor Memory Workshop. IEEEDOI
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Park Milim, , NAND Flash reliability degradation induced by HCI in boosted channel potential., 2010 IEEE International Reliability Physics Symposium. IEEEDOI
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