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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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  4. 10.5573/JSTS.2020.20.5.474
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REFERENCES

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Kim S. C., Jan., 2012, Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO, IEEE Electron Device Letter, Vol. 33, No. 1, pp. 62-64DOI
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Yoon J. S., Sep., 2018, Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions, Journal of Alloys and Compounds, Vol. 762, No. 25, pp. 456-462DOI
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Kim H. J., May, 2020, The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress, IEEE Electron Device Letter, Vol. 41, No. 5, pp. 737-740DOI
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Schroder D. K., 2006, Semiconductor Material and Device Characterization, 3rd ed., Wiley, New YorkGoogle Search