Mobile QR Code QR CODE

REFERENCES

1 
Mishra U.K., 2009, AlGaN/GaN HEMTs-An Overview of Device Operation and Applications, Proceedings of the IEEE, Vol. 90, No. 60, pp. 1022-1031Google Search
2 
Ambacher O., 2000, Two Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization in Undoped and Doped AlGaN/GaN Heterostructures, Journal of Applied Physics, Vol. 87, No. 1, pp. 334-344Google Search
3 
Uemoto Y., 2007, Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation, Journal of Applied Physics. IEEE Transactions on Electron Devices, Vol. 54, No. 12, pp. 3393-3399Google Search
4 
Landford W.B., 2005, Normally Off AlGaN/GaN High Electron Mobility Transistors with P-InGaN Cap Layer, Journal of Applied Physics, Vol. 113, No. 3, pp. 034502Google Search
5 
Huang S., 2018, Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices, IEEE Transactions on Electron Devices, Vol. 65, No. 1, pp. 207-214Google Search
6 
Hwang I., 2013, p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current, IEEE Electron Device Letters, Vol. 34, No. 2, pp. 202-204Google Search
7 
Lin Y., ye2018ar, tiA Novel Digital Etch Technique for p-GaN Gate HEMTtle, 2018 IEEE International Conference on Semiconductor Electronics (ICSE), pp. 121-123Google Search
8 
Zhong Y., 2017, Self-Terminated Etching of GaN with a High Selectivity Over AlGaN Under Inductively Coupled Cl2/N2/O2 Plasma with a Low-Energy Ion Bombardment, Applied surface science, Vol. 420, No. 31, pp. 817-824Google Search
9 
Han Y.J., 2003, Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas, Japanese Journal of Applied Physics, Vol. 42, pp. 1139-1141Google Search
10 
Lee J.M., 2000, Highly Selective Dry Etching of III Nitrides Using an Inductively Coupled Cl2/Ar/O2 plasma, Journal of Vacuum Science & Technology B, Vol. 42, No. 10, pp. 1409-1411Google Search
11 
Zhu K., 2002, Plasma Etching of AlN/AlGaInN Superlattices for Device Fabrication, Applied Physics Letters, Vol. 81, No. 25, pp. 4688Google Search
12 
Schroder D.K., 2006, “Semiconductor Material and Device Characterization, pp. 61-65Google Search