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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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  4. 10.5573/JSTS.2020.20.6.533
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REFERENCES

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L. Li , Mar 2020, Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor, IEEE Trans. Nucl. Sci., Vol. 67, No. 3, pp. 508-517DOI
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S. D. Arthur , V. A. K. Temple , Sep 1993, Special 1400 volt N-MCT designed for surge applications, in \1993 Fifth European Conference on Power Electronics and Applications, Vol. 2, No. , pp. 266-271Google Search
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Chen W.J., Sun R.Z., Peng C.F., Zhang B., Jul 2014, High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications, Chin. Phys. B, Vol. 23, No. 7, pp. 077-307Google Search
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H. Dettmer , W. Fichtner , P. Bauer , 1994, New (super) self aligned MOS controlled thyristors, (S)SAMCTs, switching 20 A at 4 kV, in Proceedings of 1994 IEEE International Electron Devices Meeting, Vol. , No. , pp. 395-398DOI
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W. Chen , Oct 2017, Design and Characterization of High di/dt CS-MCT for Pulse Power Applications, IEEE Trans. Electron Devices, Vol. 64, No. 10, pp. 4206-4212DOI