JSTS - Journal of Semiconductor Technology and Science

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Jeon K., Kim J., Ryu J. J., Yoo S.-J., Song C., Yang M. K., Jeong D. S., Kim G. H., 2021, Self-rectifycing resistive memroy in passive crossbar arrays, Nat. Commun., Vol. 12, pp. 2968

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Duan Y., Gao H., Guo J., Yang M., Yu Z., Shen X., Wu S., Sun Y., Ma X., Yang Y., 2021, Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM, Appl. Phys. Lett., Vol. 118, pp. 013501

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Choi Y., Song I., Park M.-H., Chung H., Chang S., Cho B., Kim J., Oh Y., Kwon D., Sunwoo J., 2012, A 20nm 1.8 V 8Gb PRAM with 40MB/s program bandwidth, in 2012 IEEE International Solid-State Circuits Conference, pp. 46-48

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Sarwat S. G., 2017, Materials science and engineering of phase change random access memory, Mater. Sci. Technol., Vol. 33, No. 16, pp. 1890-1906

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Apalkov D., Khvalkovskiy A., Watts S., Nikitin V., Tang X., Lottis D., Moon K., Luo X., Chen E., Ong A., 2013, Spin-transfer torque magnetic random access memory (STT-MRAM), ACM J. Emerg. Technol. Comput. Syst. (JETC), Vol. 9, No. 2, pp. 1-35

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Pourmeidani H., Demara R. F., 2021, High-accuracy deep belief network: Fuzzy neural networks using MRAM-based stochastic neurons, IEEE J. Explor. Solid-State Comput. Devices Circuits, Vol. 7, No. 2, pp. 125-131

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Na T., Kang S. H., Jung S.-O., 2020, Distribution analysis and multiple-point tail fitting yield estimation method for STT-MRAM, J. Semicond. Technol. Sci., Vol. 20, No. 3, pp. 271-280

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Tan A. J., Chatterjee K., Zhou J., Kwon D., Liao Y.-H., Cheema S., Hu C., Salahuddin S., 2019, Experimental demonstration of a ferroelectric HfO

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Bae J.-H., Kwon D., Jeon N., Cheema S., Tan A. J., Hu C., Salahuddin S., 2020, Highly scaled, high endurance,

${\Omega}$ -gate, nanowire ferroelectric FET memory transistors, IEEE Electron Device Lett., Vol. 41, No. 11, pp. 1637-1640

17

Nguyen M.-C., Lee K., Kim S., Youn S., Hwang Y., Kim H., Choi R., Kwon D., 2022, Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices, IEEE Electron Device Lett., Vol. 43, No. 1, pp. 17-20

18

Lee D. K., Kim M.-H., Kim T.-H., Bang S., Choi Y.-J., Kim S., Cho S., Park B.-G., 2019, Synaptic behaviors of HfO

$_{2}$ ReRAM by pulse frequency modulation, Solid-State Electron., Vol. 154, pp. 31-35

19

Shim W., Luo Y., Seo J.-S., Yu S., 2020, Investigation of read disturb and bipolar read scheme on multilevel RRAM-based deep learning inference engine, IEEE Trans. Electron Devices, Vol. 67, No. 6, pp. 2318-2323

20

Sarkar B., Lee B., Misra V., 2015., Understanding the gradual reset in Pt/Al

$_{2}$ O

$_{3}$ /Ni RRAM for synaptic applications, Semicond. Sci. Technol., Vol. 30, No. 10, pp. 105014

21

Mahata C., Kim M.-H., Bang S., Kim T.-H., Lee D. K., Choi Y.-J., Kim S., Park B.-G., 2019., SiO

$_{2}$ layer effect on atomic layer deposition Al

$_{2}$ O

$_{3}$ -based resistive switching memory, Appl. Phys. Lett., Vol. 114, No. 18, pp. 182102

22

Kim T.-H., Kim S., Park B.-G., 2021, Improved rectification characteristics by engineering energy barrier height in TiO

$_{x}$ -based RRAM, Microelectron. Eng., Vol. 237, pp. 111498

23

Kim T.-H., Kim M.-H., Bang S., Lee D. K., Kim S., Cho S., Park B.-G., 2020, Fabrication and characterization of TiO

$_{x}$ memristor for synaptic device application, IEEE Trans. Nanotechnol.

24

Park J., Kim T.-H., Kim S., Lee G. H., Nili H., Kim H., 2021, Conduction mechanism effect on physical unclonable function using Al

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Kim T.-H., Lee J., Kim S., Park J., Park B.-G., Kim H., 2021., 3-bit multilevel operation with accurate programming scheme in TiO

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Kim T.-H., Kim S., Hong K., Park J., Hwang Y., Park B.-G., Kim H., 2021, Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system, Chaos Solitons Fractals, Vol. 153, pp. 111587

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Kim S., Kim T.-H., Kim H., Park B.-G., 2020., Current suppressed self-compliance characteristics of oxygen rich TiO

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Kim H., Mahmoodi M., Nili H., Strukov D. B., 2021, 4K-memristor analog-grade passive crossbar circuit, Nat. Commun., Vol. 12, pp. 5198

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Ryu H., Kim S., 2020., Self-rectifying resistive switching and short-term memory characteristics in Pt/HfO

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Ryu H., Kim S., 2021, Implementation of a reservoir computing system using the short-term effects of Pt/HfO

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Kim T., Kim H., Kim J., Kim J.-J., 2017, Input Voltage Mapping Optimized for Resistive Memory-Based Deep Neural Network Hardware, IEEE Electron Device Lett., Vol. 38, No. 9, pp. 1228-1231

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Zhou J., Kim K.-H., Lu W., 2014, Crossbar RRAM arrays: Selector device requirements during read operation, IEEE Trans. Electron Devices, Vol. 61, No. 5, pp. 1369-1376

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Journal of Semiconductor Technology and Science

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JSTS
Journal of Semiconductor Technology and Science