Mobile QR Code QR CODE

References

1 
T. Wu, C.-W. Sher, Y. Lin, C.-F. Lee, S. Liang, Y. Lu, S.-W. H. Chen, W. Guo, H.-C. Kuo, and Z. Chen, ``Mini-LED and micro-LED: Promising candidates for the next generation display technology,'' Applied Sciences, vol. 8, no. 9, 1557, Sep. 2018.DOI
2 
H. Gao, M. Zou, C. Zhong, J. Zhuang, J. Lin, Z. Lu, Z. Jiang, Y. Lu, Z. Chen, and W. Guo, ``Advances in pixel driving technology of micro-LED displays,'' Nanoscale, vol. 9, no. 43, pp. 17232-17248, Oct. 2023.DOI
3 
D. Chen, Y.-C. Chen, G. Zeng, D. W. Zheng, and H.-L. Lu, ``Integration technology of micro-LED for next-generation display,'' Research, vol. 6, 0047, Apr. 2023.DOI
4 
C. Linghu,S. Zhang, C. Wang, H. Lio, and J. Song, ``Chapter eight-mass transfer for micro-LED display: Transfer printing techniques,'' Semiconductors and Semimetals, vol. 106, pp. 253-280, Jan. 2021.DOI
5 
H. He, J. Huang, T. Tao, T. Zhi, K. Zhang, Z. Zhuang, Y. Yan, and B. Liu, ``Monolithic integration of GaN-based transistors and micro-LED,'' Nanomaterials, vol. 14, no. 6, 511, Mar. 2024.DOI
6 
Y. Sang, D. Zhang, Z. Zhuang, J. Yu, F. Xu, and D. Jiang, ``Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction,'' IEEE Electron Device Letters, vol. 44, no. 7, pp. 1156-1159, Jul. 2023.DOI
7 
W. Lam, W. S. Lam, and P. F. Lee, ``The studies on gallium nitride-based materials: A bibliometric analysis,'' Materials, vol. 16, no. 1, 401, Jan. 2023.DOI
8 
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, ``Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays,'' Acta Materialia, vol. 61, no. 3, pp. 945-951, Feb. 2013.DOI
9 
K. H. Teo, Y. Zhang, N. Chowdhury, S. Rakheja, R. Ma, Q. Xie, E. Yagyu, K. Yamanaka, K. Li, and T. Palacios, ``Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects,'' Jorunal of Applied Physics, vol. 130, no. 16, 160902, Oct. 2021.DOI
10 
M. Buffolo, D. Favero, A. Marcuzzi, C. de Santi, G. Menghesso, and E. Zanoni, ``Review and outlook on GaN and SiC power devices: Industrial state-of-the-art, applications, and perspectives,'' IEEE Transcations on Electron Devices, vol. 71, no. 3, pp. 1344-1355, Jan. 2024.DOI
11 
W. H. Jang, K. S. Seo, and H. Y. Cha, ``P-GaN gated AlGaN/GaN E-mode HFET fabricated with selective GaN etching Pprocess,'' Journal of Semiconductor Technology and Science, vol. 20, no. 6, pp. 485-490, Dec. 2020.DOI
12 
D. G. Kim, J.-H. Yim, M.-K. Lee, M.-S. Chae, H. Kim, and H.-Y. Cha, ``P-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor with a threshold voltage of 6 V,'' IEEE Electron Device Letters, vol. 45, no. 6, pp. 972-975, Jun. 2024.DOI
13 
Y. Yin and K. B. Lee, ``High-performance enhancement-mode-channel GaN MISFETs with steep subthreshold swing,'' IEEE Electron Device Letters, vol. 43. no. 4, pp. 533-536, Feb. 2022.DOI
14 
C.-Y. Chang, Y.-C. Li, K. Ren, Y. C. Liang, and C.-F. Huang, ``An AlGaN/GaN High electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes,'' IEEE Journal of the Electron Devices Society, vol. 8, pp.346-349, 2020.DOI
15 
S. Li, J. Zheng, and Z. Liu, ``Homogenous integration methods for micro-LED and 2T1C structure HEMT,'' SID Symposium digest of Technical Papers, vol. 50, no. S1, pp. 867-870, Oct. 2019.DOI
16 
J. Yan, B. Jia, and Y. Wang, ``Monolithically integrated voltage-controlled MOSFET-LED device based on a GaN-on-silicon LED epitaxial wafer,'' Optics Letters, vol. 46, no. 4, pp. 745-748, Feb. 2021.DOI
17 
H.-J. Kim, J.-H. Yim, H. Kim, and H.-Y. Cha, ``Fluorine-based low-damage selective etching process for E-mode p-GaN/AlGaN/GaN HFET fabrication,'' Electronics, vol. 12, no. 20, 4347, Oct. 2023.DOI
18 
C.-Y. Chang, Y.-C. Li, K. Ren, Y. C. Liang, and C.-F. Huang, ``An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes,'' IEEE Journal of the Electron Devices Society, vol. 8, pp. 346-349, Mar. 2020DOI
19 
C. Liu, Y. Cai, X. Zou, and K. M. Lau, ``Low-leakage high-breakdown laterally integrated HEMT-LED via n-GaN electrode,'' IEEE Photonics Technology Letters, vol. 28, no. 10, pp. 1130-1133, Feb. 2016.DOI