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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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  3. 2025-04 (Vol.25 No.02)
  4. 10.5573/JSTS.2025.25.2.142
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References

1 
J. Kim and Y. Kim, ``HBM: Memory solution for band- width-hungry processors,'' Proc. of 2014 IEEE Hot Chips 26 Symposium (HCS), IEEE, 2014.DOI
2 
S. S. N. Larimi, B. Salami, O. S. Unsal, A. C. Kestelman, H. Sarbazi-Azad, and O. Mutlu, ``Understanding power consumption and reliability of high-bandwidth memory with voltage underscaling,'' Proc. of 2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), IEEE, 2021.DOI
3 
T. Kim, J. Lee, Y. Kim, H. Park, H. Hwang, and J. Kim, ``Thermal improvement of HBM with joint thermal resistance reduction for scaling 12 stacks and beyond,'' Proc. of 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), IEEE, 2023.DOI
4 
T. Kim, J. Lee, J. Kim, E.-C. Lee, H. Hwang, and Y. Kim, ``Thermal modeling and analysis of high bandwidth memory in 2.5 D Si-interposer systems,'' Proc. of 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm), 2022.DOI
5 
K. Son, J. Park, S. Kim, B. Sim, K. Kim, and S. Choi, ``Thermal analysis of high bandwidth memory (HBM)-GPU module considering power consumption,'' IEEE Electrical Design of Advanced Packaging and Systems (EDAPS), IEEE, 2023.DOI
6 
J.-Y. Zhou, S.-B. Liang, C. Wei, W.-K. Le, C.-B. Ke, and M.-B. Zhou, ``Three-dimensional simulation of the thermo-mechanical interaction between the micro-bump joints and Cu protrusion in Cu-filled TSVs of the high bandwidth memory (HBM) structure,'' Proc. of IEEE 69th Electronic Components and Technology Conference (ECTC), IEEE, 2019.DOI
7 
S. O, J. Hong, S. Lee, S. Kyung, J. Lee, and K. Kim, ``Predicting reliability behavior in HBM packages through numerical simulation,'' Proc. of IEEE 73rd Electronic Components and Technology Conference (ECTC), IEEE, 2023.DOI
8 
C. Feng, F. Wei, K.-Y. Sun, Y. Wang, H.-B. Lan, H.-J. Shang, F.-Z. Ding, L. Bai, J. Yang, and W. Yang, ``Emerging flexible thermally conductive films: mechanism, fabrication, application,'' Nano-Micro Letters, vol. 14, no. 1, 127, 2022.DOI
9 
K. Chatterjee, Y. Li, H. Chang, M. Damadam, P. Asrar, and J. Kim, ``Thermal and mechanical simulations of 3D packages with custom high bandwidth memory (HBM),'' Proc. of 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), IEEE, 2024.DOI
10 
K. Son, S Kim, H. Park, S. Kim, K. Kim, and S. Park, ``A novel through mold plate (TMP) for signal and thermal integrity improvement of high bandwidth memory (HBM),'' Proc. of 2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), IEEE, 2020.DOI
11 
A. Agrawal, S. Huang, G. Gao, L. Wang, J. DeLaCruz, and L. Mirkarimi, ``Thermal and electrical performance of direct bond interconnect technology for 2.5 D and 3D integrated circuits,'' Proc. of 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), IEEE, 2017.DOI
12 
D. M. Mathew, H. Kattan, C. Weis, J. Henkel, N. Wehn, and H. Amrouch, ``Longevity of commodity DRAMs in harsh environments through thermoelectric cooling,'' IEEE Access, vol. 9, pp. 83950-83962, 2021.DOI
13 
J. Hong, S. Cho, G. Park, W. Yang, Y.-H. Gong, and G. Kim, ``Bandwidth-effective DRAM cache for GPU s with storage-class memory,'' Proc. of 2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA), IEEE, 2024.DOI
14 
AMD, ``Versal adaptive SoC programmable network on chip and integrated memory controller v1.1,'' LogiCORE IP Product Guide, v1.1, 91, 9 Aug. 2024.URL
15 
Y. Chen, D. Zhao, F. Liu, J. Gao, and H. Zhu, ``Thermal layout optimization for 3D stacked multichip modules,'' Microelectronics Journal, vol. 139, 105882, 2023.DOI