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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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  3. 2025-04 (Vol.25 No.02)
  4. 10.5573/JSTS.2025.25.2.160
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References

1 
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2 
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3 
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4 
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5 
L. Baczkowski, J.-C. Jacquet, O. Jardel, C. Gaqui\`{e}re, M. Moreau, and D. Carisetti, ``Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions,'' IEEE Transactions on Electron Devices, vol. 62, no. 12, pp. 3992-3998, Nov. 2015.DOI
6 
C. Lee, P. Saunier, J. Yang, and M. A. Khan, ``AlGaN-GaN HEMTs on SiC with CW power performance of $>4$ W/mm and 23% PAE at 35 GHz,'' IEEE Electron Device Letters, vol. 24, no. 10, pp. 616-618, Sep. 2003.DOI
7 
Y. C. Choi, M. Pophristic, H.-Y. Cha, B. Peres, M. G. Spencer, and L. F. Eastman, ``The effect of an fe-doped GaN buffer on off-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate,'' IEEE Transactions on Electron Devices, , vol. 53, no. 12, pp. 2926-2931, Dec. 2006.DOI
8 
M. J. Uren, M. Caeser, S. Karboyan, P. Moens, P. Vanmeerbeek, and M. Kuball, ``Electric field reduction in C-doped AlGaN/GaN on Si high electron mobility transistors,'' IEEE Electron Device Letters, vol. 36, no. 8, pp. 826-828, Aug. 2015.DOI
9 
B. M. Green, V. Tilak, V. S. Kaper, J. A. Smart, J. R. Shealy, and L. F. Eastman, ``Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions,'' IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 2, pp. 618-623, Feb. 2003.DOI
10 
R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, ``The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs,'' IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.DOI
11 
D.-Y. Chen, A> malmros, M. Thorsell, H. Hjelmgren, O. Kordina, and J.-T. Chan, ``Microwave performance of `thin buffer' GaN-on-SiC high electron mobility transistors,'' IEEE Electron Device Letters, vol. 41, no. 6, pp. 828-831, Jun. 2020.DOI
12 
J. Joh, J. del Alamo, U. Chowdhury, T.-M. Chou, H.-Q. Tseng, and J. L. Jimenez, ``Measurement of channel temperature in GaN high-electron mobility transistors,'' IEEE Electron Device Letters, vol. 56, no. 12, pp. 2895-2901, Dec. 2009.DOI
13 
H. Luo and Y. Guo, ``A transconductance-based extraction method for thermal Rresistance in GaN HEMTs,'' IEEE Transactions on Electron Devices, vol. 71, no. 2, pp. 997-1002, Feb. 2024.DOI