Mobile QR Code QR CODE

The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

Journal Search

  1. Home
  2. Archive
  3. 2025-06 (Vol.25 No.03)
  4. 10.5573/JSTS.2025.25.3.218
XML PDF INFO REF

References

1 
A. Concannon, ``Evolution of ESD robust IC design: How ESD design and ESD control have changed our industry,'' IEEE Solid-State Circuits Magazine, vol. 15, no. 4, pp. 58-63, 2023.DOI
2 
C. Li and Z. Pan, ``ESD protection designs: Topical overview and perspective,'' Nanomaterials, vol. 22, no. 3, pp. 356-370, 2022.DOI
3 
J. Liu, F. Yang, and Y. Liu, ``A novel low trigger voltage low leakage SCR for low-voltage ESD protection,'' Semiconductor Science and Technology, vol. 39, no. 2, 025005, 2024.DOI
4 
F. Du, S> Song, F. Hou, W. Song, L. Chen, and J. Liu, ``An enhanced gate-grounded NMOSFET for robust ESD applications,'' IEEE Electron Device Letters, vol. 40, no. 9, pp. 1491-1494, 2019.DOI
5 
J. Shi, ``ESD characteristics of GGNMOS device in deep sub-micron CMOS technology,'' Proc. of 2016 International Conference on Audio, Language and Image Processing (ICALIP), IEEE, pp. 327-331, 2016.DOI
6 
J. Wu, Z. Yu, G. Hong, and R. Xie, ``Design of GGNMOS ESD protection device for radiation-hardened 0.18 $\mu$m CMOS process,'' Journal of Semiconductors, vol. 41, no. 12, 122403, 2020.DOI
7 
M. Paul, C. Russ, B. S. Kumar, H. Gossner, and M. Shrivastave, ``Physics of current filamentation in ggNMOS devices under ESD condition revisited,'' IEEE Transactions on Electron Devices, vol. 65, no. 7, pp. 2981-2989, 2018.DOI
8 
J. Wu, Z. Yu, G. Hong, and R. Xie, ``Design of GGNMOS ESD protection device for radiation-hardened 0.18 $\mu$m CMOS process,'' Journal of Semiconductors, vol. 41, no. 12, 122403, 2020.DOI
9 
M. D. Ker and J. H. Chen, ``Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices,'' IEEE Journal of Solid-State Circuits, vol. 41, no. 11, pp. 2601-2609, 2006.DOI
10 
K. M. Sun, T. Li, and L. Y. Meng, ``A PNP-triggered dynamic substrate GGNMOS with improved performances,'' Solid-State Electronics, vol. 171, 107842, 2020.DOI
11 
J. Wu, S. Dong, M. Li, M. Miao, F. Ma, J. Zheng, and Y. Han, ``A novel power-clamp assisted complementary MOSFET for robust ESD protection,'' Microelectronics Reliability, vol. 52, no. 8, pp. 1593-1597, 2012.DOI
12 
S. Wang, Z. Zhu, X. Feng, R. Liang, H. Liu, and L. Xu, ``A modified Zener diode-triggered silicon controlled rectifier used for 5 V application in 0.18 um BCD process,'' Proc. of 2022 10th International Symposium on Next-Generation Electronics (ISNE), IEEE, pp. 1-3, 2023.DOI
13 
L. Luh, J. Choma, and J. Draper, ``A Zener-diode-activated ESD protection circuit for sub-micron CMOS processes,'' Proc. of 2000 IEEE International Symposium on Circuits and Systems (ISCAS), IEEE, vol. 5, pp. 65-68, 2000.DOI
14 
K. M. Sun, T. Li, and L. Y. Meng, ``A PNP-triggered dynamic substrate GGNMOS with improved performances,'' Solid-State Electronics, vol. 171, 107842, 2020.DOI
15 
F. Ma, Y. Han, B. Song, S. Dong, M. Miao, J. Zheng, J. Wu, and K. Zhu, ``Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process,'' Microelectronics Reliability, vol. 51, no. 12, pp. 2124-2128, 2011.DOI
16 
S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981.URL
17 
S. H. Voldman, ESD: Circuits and Devices, John Wiley & Sons, 2015.URL