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Journal of the Korean Institute of Illuminating and Electrical Installation Engineers

ISO Journal TitleJ Korean Inst. IIIum. Electr. Install. Eng.
Title Analysis on Temperature and Pressure Responses of Voltage-Induced Oscillation Based on Vanadium Dioxide Two-Terminal Device According to Device Dimensio
Authors Min Seok Kim ; Yong Wook Lee
DOI http://dx.doi.org/10.5207/JIEIE.2019.33.10.019
Page pp.19-26
ISSN 1225-1135
Keywords Vanadium Dioxide; Oscillation; Temperature Sensor; Pressure Sensor
Abstract In this paper, we analyzed the temperature and pressure responses of voltage-induced oscillation created in a two-terminal device based on a vanadium dioxide (VO2) thin film for three devices with different dimensions. The voltage-induced oscillation can be generated by connecting a VO2-based two-terminal device, an external resistor, and a DC power supply in series, and the waveform of the oscillation varies by changes in the ambient temperature and pressure. The temperature and pressure responses of this oscillation were investigated by using two oscillation waveform parameters such as the oscillation frequency (fo) and the oscillation amplitude (Ao). The three devices used for the dimension analysis, designated as Devices I, II, and III, were fabricated to have a fixed electrode separation of 10μm and current channel widths of 3, 5, and 10μm, respectively. The temperature- and pressure-induced variations of the oscillation waveforms (fo and Ao) were observed for the three VO2 devices (Devices I, II, and III). If the measured responses of fo and Ao are linear and independent with each other, temperature and pressure changes applied to the device can be separately measured. Also, through the device dimension analysis, it is concluded that the initial values of the parameters (fo and Ao) can be adjusted in the separate measurement of temperature and pressure by controlling the current channel width of the device.