| Title |
Research on Surface Treatment Applying Nitrogen Atmospheric Pressure Plasma Technology to Apply Perovskite Semiconductor Film as a Material for Optoelectronic Devices and Secondary Batteries |
| Authors |
Kyoung-Bo Kim ; Jongpil Lee ; Moojin Kim |
| DOI |
http://doi.org/10.5207/JIEIE.2021.35.10.015 |
| Keywords |
Nitrogen atmospheric pressure plasma; Optoelectronic device; Perovskite; Surface treatment |
| Abstract |
Perovskite materials have recently been intensively studied because of their excellent optical properties. However, when this material is exposed to air, there is a problem in that properties deteriorate. In this paper, we investigated whether such deterioration can be restored to its original characteristics by using nitrogen atmospheric pressure plasma technology. In order to observe the return to the original coated film, the experiment was conducted as follows. After coating the perovskite semiconductor material, when exposed to air for about 6 months, some grains are lifted due to contact with oxygen or water vapor, and holes are also observed. In order to restore these grain changes to the originally formed film, the surface of the semiconductor material was treated from 5 s to 1200 s using nitrogen plasma. The surface-treated samples were observed by SEM, EDS, and AFM analysis techniques. As a result of observing the surface shape using SEM, the flotation or hole disappeared for 5 seconds and 10 seconds, and the same surface shape as the deposited film was shown. However, in the film treated for 30 to 60 seconds, the thin film is gradually removed by nitrogen plasma. Under the condition of 180 seconds or more, a number of islands are very densely distributed rather than the form of a film. According to the AFM analysis, the surface roughness of the sample exposed to air for 180 days was about 14.724nm, but it can be seen that the roughness value was significantly reduced to 1.6338nm for the film that was processed for 5 seconds. A solar cell device was fabricated using the film exposed to air for 6 months and the surface-treated film. Nitrogen plasma treatment confirmed the improvement of degraded thin film properties. These results suggest the possibility of restoration even if the perovskite thin film degrades due to exposure to the air in the future. |