| Title |
High-repetition-rate Current Switching Controlled by Photothermal Effect in Electronic Device based on Vanadium Dioxide Thin Film Grown on AlN/Si Substrate |
| Authors |
Jihoon Kim ; Yong Wook Lee |
| DOI |
http://doi.org/10.5207/JIEIE.2023.37.1.014 |
| Keywords |
Aluminum nitride; Heterostructure; Metal-insulator transition; Switching; Thin film; Vanadium dioxide |
| Abstract |
In this study, an electronic device based on a vanadium dioxide (VO2) heterostructure thin film grown on an aluminum nitride(AlN)/silicon(Si) substrate was fabricated to realize high-repetition-rate current switching controlled by the photothermal effect. In the conventional VO2/sapphire(Al2O3) device, the current switching controlled by the photothermal effect takes a long time for the cooling process to return the device to the off-state. This problem made high-repetition-rate switching impossible. On the other hand, it was assumed that the VO2/AlN/Si device would be suitable for high-repetition-rate switching because it has a higher critical temperature and superior thermal conductivity than the VO2/Al2O3 device. And, we demonstrated the photothermally-controlled current switching with a repetition rate of up to 60Hz while maintaining a high on-state current of 50mA using an optimized experimental setup and a newly fabricated device. The switching response time was also improved to 1ms level. |