JIEIE
Journal of the Korean Institute of Illuminating
and Electrical Installation Engineers
KIIEE
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ISSN : 2287-5034 (Online)
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Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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J Korean Inst. IIIum. Electr. Install. Eng.
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2023-02
(Vol.37 No.1)
10.5207/JIEIE.2023.37.1.014
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References
1
F. J. Morin, “Oxides Which Show a Metal-insulator Transition at the Neel Temperature,” Physical Review Letters, Vol. 3, pp. 34-36, 1959.
2
Y. Zhou, et al., “Voltage-triggered Ultrafast Phase Transition in Vanadium Dioxide Switches,” IEEE Electron Device Letters, Vol. 34, pp. 220-222, 2013.
3
S. Zhang, et al., “Current-modulated Optical Properties of Vanadium Dioxide Thin Films in the Phase Transition Region,” Applied Physics Letters, Vol. 105, pp. 211104(1-4), 2014.
4
E. Arcangeletti, et al., “Evidence of a Pressure-induced MetAllization Process in Monoclinic VO2,” Physical Review Letters, Vol. 98, pp. 196406(1-4), 2007.
5
A. Cavalleri, et al., “Femtosecond Structural Dynamics in VO2 During an Ultrafast Solid-solid Phase Transition,” Physical Review Letters, Vol. 87, pp. 237401(1-4), 2001.
6
H. Coy, R. Cabrera, N. Sepulveda, and F. E. Fernandez, “Opto-electronic and Full-optical Multiple State Memory Response in Phase-change Materials,” Journal of Applied Physics, Vol. 108, pp. 113115(1-6), 2010.
7
X. Chen and Q. Lv, “Resistance Hysteresis Loop Characteristic Analysis of VO2 Thin Film for High Sensitive Microbolometer,” Optik, Vol. 126, pp. 2718-2722, 2015.
8
B.-J. Kim, et al., “Laser-Assisted Control of Electrical Oscillation in VO2 Thin Films Grown by Pulsed Laser Deposition,” Japanese Journal of Applied Physics, Vol. 51, pp. 107302(1-5), 2012.
9
B. K. Ridley and T. B. Watkins, “The Possibility of Negative Resistance Effects in Semiconductors,” Proceedings of the Physical Society of London, Vol. 78, pp. 293-304, 1961.
10
H.-T. Kim, et al., “Mechanism and Observation of Mott Transition in VO2-based Two- and Three-terminal Devices,” New Journal of Physics, Vol. 6, pp. 52(1-19), 2004.
11
Y. W. Lee, et al., “Photo-assisted Electrical Gating in a two-terminal Device Based on Vanadium Dioxide Thin Film,” Optics Express, Vol. 15, pp. 12108-12113, 2007.
12
B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional Laser Triggering of Planar Device Based on Vanadium Dioxide Thin Film,” Optics Express, Vol. 22, pp. 9016-9023, 2014.
13
J. Kim, et al., “Laser-Regulated 60mA Current Switching in VO2-Based Two-Terminal Device Using 976nm Laser Diode,” Journal of Nanoscience and Nanotechnology, Vol. 19, pp. 1620-1625, 2019.
14
J. Kim, et al., “Reversible 100mA Current Switching in a VO2/Al2O3-Based Two-Terminal Device Using Focused Far-Infrared Laser Pulses,” Journal of Nanoscience and Nanotechnology, Vol. 21, pp. 1862-1868, 2021.
15
T. Slusar, et al., “Epitaxial Growth of Higher Transition-temperature VO2 Films on AlN/Si,” APL Materials, Vol. 4, pp. 026101(1-7), 2016.
16
J. Kim and Y. W. Lee, “Reversible Current Switching Based on Near-Infrared Laser Pulses in VO2/AlN Heterostructure Thin Film on Si Substrate,” Journal of the Korean Institute of IIIuminating and Electrical Installation Engineers, Vol. 33, pp. 59-65, 2019.
17
J. Kim, “Study on Photothermally Controlled Current Switching of Electronic Devices Based on Vanadium Dioxide Thin Films,” Ph.D. Thesis, Department of Electrical Engineering, Pukyong National University, 2021.
18
J. Kim, et al., “Bidirectional Current Triggering in VO2-Based Device with High-Repetition-Rate Pulse Beams Using Near-Infrared Laser Diode,” Journal of Nanoscience and Nanotechnology, Vol. 20, pp. 351-358, 2020.
19
D. G. Cahill and S.-M. Lee, “Thermal Conductivity of κ-Al2O3 and α-Al2O3 Wear-resistant Coatings,” Journal of Applied Physics, Vol. 83, pp. 5783-5786, 1998.
20
H. R. Shanks, P. D. Maycock, P. H. Sidles, and G. C. Danielson, “Thermal Conductivity of Silicon from 300 to 1400°K,” Physical Review, Vol. 130, pp. 1743-1748, 1963.