| Title |
Research on the Deposition of Ti Thin Film on Glass Using Atmospheric Pressure Plasma Etching Technology |
| Authors |
Kyoung-Bo Kim ; Jongpil Lee ; Moojin Kim |
| DOI |
http://doi.org/10.5207/JIEIE.2023.37.6.001 |
| Keywords |
Atmospheric pressure plasma; CF4 gas; Etching; Deposition; Titanium |
| Abstract |
In the semiconductor or display field, the deposition of metals or insulators onto substrates typically requires film formation in a vacuum atmosphere. However, this paper discusses the deposition of conductive materials on glass using atmospheric pressure plasma equipment. The researchers modified the head of the plasma generator component to enable the deposition of Titanium (Ti) on glass. The process involved supplying Argon (Ar) and CF4 gases to etch a 4-inch Ti target for sputtering. The resulting materials were then transferred to the glass, covering the entire 2.5cm surface. The substances formed on the glass could be classified into 21 loactions based on color. The surface morphology of each location was examined using scanning electron microscopy equipment. The elemental components were analyzed using energy dispersive spectrometer equipment, and the surface resistance was investigated using a 4-point probe. In almost all areas, fluorine was observed. Interestingly, the area farthest from the plasma formation site, fluorine was not detected. This region also showed a lower surface resistance compared to the other areas. The study suggests that the modified atmospheric plasma equipment allows for the successful deposition of conductive materials on glass, with potential applications in electronic devices. Future plans include, verifying the feasibility of the technology proposed in this study by manufacturing electronic devices based on atmospheric pressure plasma deposition technology. |