| Title |
Study on E-mode GaN FET Modeling and Circuit Implementation |
| Authors |
You-Jin Shin ; Ho-Young Cha ; Hyun-Seop Kim |
| DOI |
http://doi.org/10.5207/JIEIE.2024.38.2.133 |
| Keywords |
Field-effect transistor; Gallium nitride; Logic circuit; Modeling; Monolithic integration |
| Abstract |
This study presents the modeling and implementation of GaN logic circuits using the MIT Virtual Source GaNFET (MVSG) model for E-mode p-GaN/AlGaN/GaN HFETs. Parameters for E-mode HFET and 2DEG characteristics were determined using the MVSG model, optimized to establish stable logic circuits. Subsequently, GaN logic circuits were fabricated through monolithic integration, demonstrating their stability and potential for driver IC design. The fabricated inverter circuit demonstrated an outstanding noise margin and operated successfully at 500kHz. |