| Title |
[REGULAR PAPER] Effects of Work-function Variation on Performance of Junctionless and Inversion-mode Dual-metal Gate Nanowire Transistors |
| Authors |
(Liang Dai) ; (Weifeng Lu) ; (Mi Lin) |
| DOI |
https://doi.org/10.5573/JSTS.2020.20.4.349 |
| Keywords |
Dual-metal gate; nanowire transistor; process variation; work-function variation (WFV) |
| Abstract |
This study compares junctionless (JL) and inversion-mode (IM) dual-metal gate (DMG) nanowire transistors in terms of their performance fluctuations caused by work-function variation (WFV) through computer-aided-design simulation, To the best of our knowledge, this is the first of such an investigation. From the variability of the performance parameters, including the threshold voltage (VTH), transconductance (gm), saturation current (Isat), and subthreshold slope (SS), we observe that IM devices have stronger immunity to WFV than JL devices in terms of VTH and SS, whereas JL devices perform better in terms of Isat and gm from the relative fluctuation perspective. Moreover, the impact of WFV is found to become more severe as the ratio of the metal gate near the source to the entire metal gate decreases. In summary, our study can serve as a reference for optimizing the distribution of the two metals in the design of JL and IM DMG nanowire transistors. |