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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Title Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier
Authors (Shogo Maeda) ; (Shinsaku Kawabata) ; (Itsuki Nagase) ; (Ali Baratov) ; (Masaki Ishiguro) ; (Toi Nezu) ; (Takahiro Igarashi) ; (Kishi Sekiyama) ; (Suguru Terai) ; (Keito Shinohara) ; (Melvin John F. Empizo) ; (Nobuhiko Sarukura) ; (Masaaki Kuzuhara) ; (Akio Yamamoto) ; (Joel T. Asubar)
DOI https://doi.org/10.5573/JSTS.2024.24.1.25
Page pp.25-32
ISSN 1598-1657
Keywords AlGaN/GaN HEMTs; MIS-HEMT; recessed gate; AlGaN regrowth
Abstract We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device.