JSTS
Journal of Semiconductor Technology and Science
“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.
※ The user interface design of www.jsts.org has been recently revised and updated. Please contact inter@theieie.org for any inquiries regarding paper submission.
Surface Stoichiometry Dependence of Ambipolar SiGe Tunnel Field-effect Transistors and Its Effect on the Transient Performance Improvement
Provisioning CSD-based Storage Systems with Erasure-coding Offloaded to the CSD
Interfacial Trap-based 1-row Hammer Analysis of BCAT and Nitride Layer BCAT Structures in Dynamic Random Access Memory
Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier
Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor
A High Power Supply Rejection and Fast-transient LDO with Feed-forward Compensation using Current Sensing Technique
A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array
A 1.03MOPS/W Lattice-based Post-quantum Cryptography Processor for IoT Devices