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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Journal Archive

2022-04

P.53

Implementation and Performance Analysis of Elliptic Curve Cryptography using an Efficient Multiplier

(Renita J.) ; (Edna Elizabeth N.) ; (Nandhini Asokan)
https://doi.org/10.5573/JSTS.2022.22.2.53
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P.61

Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier

(Min Gyu Jeon) ; (Kang Lee) ; (Sangwan Kim) ; (Garam Kim) ; (Jang Hyun Kim)
https://doi.org/10.5573/JSTS.2022.22.2.61
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P.69

Sensitive Vector Search for Logic Circuit Failure Probability based on Improved Adaptive Cuckoo Algorithm

(Shuo Cai) ; (Sicheng Wu) ; (Weizheng Wang) ; (Fei Yu) ; (Lairong Yin)
https://doi.org/10.5573/JSTS.2022.22.2.69
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P.84

A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs

(Lin Cheng) ; (Hongliang Lu) ; (Yuming Zhang) ; (Yimen Zhang)
https://doi.org/10.5573/JSTS.2022.22.2.84
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P.93

Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array

(Yu Zhang) ; (Songmin Zhou) ; (Xun Li) ; (Xi Wang) ; (Liqi Zhu) ; (Chun Lin)
https://doi.org/10.5573/JSTS.2022.22.2.93
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P.101

Prediction Methodology for Next-generation Device Characteristics using Machine Learning

(Gwangnae Gil) ; (Sola Woo)
https://doi.org/10.5573/JSTS.2022.22.2.101
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P.105

Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric

(Hee Dae An);(So Ra Min); (Sang Ho Lee);(Jin Park); (Geon Uk Kim);(Young Jun Yoon); (Jae Hwa Seo);(Min Su Cho); (Jaewon Jang);(Jin-Hyuk Bae); (Sin-Hyung Lee); (In Man Kang)
https://doi.org/10.5573/JSTS.2022.22.2.105
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P.115

Review of Analog Neuron Devices for Hardware-based Spiking Neural Networks

(Dongseok Kwon) ; (Sung Yun Woo) ; (Jong-Ho Lee)
https://doi.org/10.5573/JSTS.2022.22.2.115
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