Zhang Z., Yu G., Zhang X., Deng X., Li S., Fan Y., Sun S., Song L., Tan S., Wu D.,
Li W., Huang W., Fu K., Cai Y., Sun Q., Zhang B., 2016, Studies on high-voltage GaN-on-Si
MIS-HEMTs using LPCVD Si$_{3}$N$_{4}$ as gate dielectric and passivation layer, IEEE
Transactions on Electron Devices, Vol. 63, No. 2, pp. 731-738