KimBongsu1
YuSeung-Myeong1
AnJongchan1
AnGwangmyeong1
SongJunyoung1
-
(Department of Electronics Engineering, Incheon National University, Incheon 22012,
Korea)
Copyright © The Institute of Electronics and Information Engineers(IEIE)
Index Terms
LDO, power management IC, power supply rejection ratio (PSRR), feed-forward
I. INTRODUCTION
Low-dropout (LDO) regulators are a type of voltage regulator that is frequently used
in contemporary electronic devices to provide a precise and stable DC supply voltage.
In applications that require a low output voltage, a low dropout voltage, and low
output noise, LDO regulators are preferred over other voltage regulators, such as
linear regulators and switch-mode regulators [1].
Power supply rejection ratio(PSRR) is an important performance parameter that measures
the ability to maintain a stable output voltage in the presence of power supply noise.
Due to the output conductance of pass transistor and the bandwidth limitations of
feedback path, the conventional LDO has low PSRR performance at high frequencies.
The feedforward method overcomes this restriction by lessening the impact of the power
supply noise by adding a compensating signal to the output voltage [2]. However, the addition of these extra circuits increases the number of dominant poles
and causes the non-dominant pole to pull into the low frequency when the load current
is small, resulting in stability problems [3]. Using a zero generator and the current sensing of the load current described in
this paper, it can be efficiently compensated.
This study proposed the current sensing method to improve the stability of LDO regulators
and feedforward techniques to enhance PSRR compared to conventional LDO. This paper
is organized as follows. Section II presents the proposed LDO and Section III explains
the interpretation of PSRR and stability. Section IV discusses simulation results.
Finally, the conclusion is given in Section V.
II. ARCHITECTURE
Fig. 1 shows the overall architecture of the proposed LDO. The error amplifier, feedforward
amplifier, and summing stage are referred to as EA, FFA, and SUM, respectively. In
addition to the current feedback loop, a feedforward path has been added for quick
compensation. Through the proposed compensation technique, it plays an auxiliary role
in increasing the PSRR. The zero is generated by the NMOS transistor to ensure the
stability of LDO. Through the current sensing block, the load current value enters
the input of the NMOS transistor gate (e.g., M$_{\mathrm{27,}}$M$_{28}$), where the
two zero positions change dynamically with variations in the load current value [4].
Fig. 2 shows the schematic overall block excluding current sensing. The transistors M$_{1}$-M$_{6}$
that make up the EA are intended to function as the NMOS transistor input OTA. By
using the NMOS transistor input OTA structure, a faster feedback speed is ensured.
The transistors M$_{7}$-M$_{14}$ composed in the FFA are designed with a two-stage
amplifier to achieve a high gain. The feedforward path and the feedback-regulating
loop at the pass transistor's gate (i.e., M$_{\mathrm{P}}$) are integrated by the
summing stage. It also provides a path to secure higher loop gain values compared
to conventional LDO. This serves as an important intermediate step for achieving a
high PSRR value. The reference voltages V$_{\mathrm{REF}}$ and V$_{\mathrm{REFZ}}$are
externally provided as bias voltages, and the PMOS transistors are used in l$_{1}$
and l$_{2}$ to regulate the current flow for the current mirror.
Fig. 3 shows the overall current sensing schematic. M$_{20}$-M$_{24}$ is designed to have
a structure with a relatively large width of transistor for accurate current sensing.
This design choice facilitates a positive feedback mechanism, enhancing the precision
of current sensing even in the presence of minute current variations. Then, to more
precisely modify the input values of M$_{27}$ and M$_{28}$, which serve as the resistance,
use M$_{25}$ and M$_{26}$.
Fig. 1. Proposed feedforward LDO block diagram.
Fig. 2. Schematic of the proposed feedforward LDO.
Fig. 3. Schematic of the current sensing.
III. ANALYSIS OF THE PROPOSED LDO
1. PSRR Analysis
This section analyzes the PSRR of conventional LDO in [2] and the proposed LDO at high frequency. Fig. 4 shows the block diagram of proposed LDO block with ripple cancellation paths as well
as the paths where ripples are generated assuming conventional LDO. In the conventional
LDO, paths 1 to 4 are the main sources of output ripple voltage. However, the domain
pole of the error amplifier of paths 3 and 4 converges to zero at high frequencies.
As a result, in cases of high frequency, path 3 and 4's influence may be disregarded.
The transfer function for paths 1 and 2 is given by
Z$_{\mathrm{L}}$, A$_{\mathrm{eo}}$, W$_{\mathrm{e}}$ are the impedance load of the
load and the DC gain and dominant pole of the error amplifier, respectively. $M_{P,\,{g_{m}}}$
and $M_{P,\,{r_{ds}}}$ are the transconductance and channel resistance of the pass
transistor. As the equation shows, the PSRR depends on the feedback gain. As frequency
increases, the dominant pole of the error amplifier reduces the feedback gain, which
in turn causes the PSRR to degrade.
To overcome this limitation, the feedforward path compensation is added as shown in
Fig. 4 and 5 shows the mathematical block diagram that expresses these compensation effects.
The following equation shows how the input to output transfer gain is determined.
Eq. (2) is set to zero to eliminate the ripples at the output. H$_{\mathrm{ff}}$(s) is the
feedforward block`s transfer function and can be obtained by the following equation.
When the gain of the feedforward amplifier is as shown in Eq. (3), the PSRR significantly increases. However, the feedback gain in Paths 1 and 2, as
well as the power supply regulation ratio of the error amplifier and the bandgap circuit
in Paths 3 and 4, are the parameters that affect PSRR in the low-frequency region.
Thus, this needs to be taken into consideration when designing it.
Fig. 4. Ripple paths from input to output in conventional LDO and feedforward cancellation paths in proposed LDO.
Fig. 5. Mathematical model of the LDO.
2. Stability Analysis
As shown in Fig. 6(a), the proposed LDO without current sensing changes only the location of the dominant
pole whenever the size of the load changes, and it makes difficult to secure stability
flexibly. Because the zero value cannot shift smoothly as the load changes if general
resistance is used without utilizing zero using current sensing and transistor. To
overcome this stability issue, the proposed LDO is designed with the zero generator
that creates the zero through current sensing at the load current. As a result, as
shown in Fig. 6(b), the pole and zero move to ensure more stable stability than the conventional LDO
when the value of the load current changes.
Fig. 6. Conceptual analysis of frequency response with different load conditions: (a) Proposed LDO without current sensing; (b) Proposed LDO.
IV. SIMULATION RESULTS
The 28 nm CMOS process was used to implement the proposed LDO that controls the output
at 1 V from a 1.2~V supply. Fig. 7 shows gain and phase margin when the I$_{\mathrm{LOAD}}$ of conventional LDO and
proposed LDO is 1~mA and 10 mA, respectively. In proposed LDO, the simulated phase
margin for the cases when I$_{\mathrm{LOAD}}$ = 1 mA and I$_{\mathrm{LOAD}}$ = 10
mA are 64˚ and 68˚, respectively.
Fig. 8 compares the PSRR with and without feedforward. LDO without a feedforward amplifier
has -16 dB of PSRR at the low frequency. However, the proposed LDO with a feedforward
amplifier makes the improvement to have -69 dB of PSRR at the low frequency. Fig. 9 shows the change in quiescent current over the load current range. When the load
current changes from 0 mA to 10 mA, the total quiescent current changes between 16.1
$\mu$A and 32 $\mu$A. The peak current efficiency is 99.7% at 10 mA.
Fig. 10 shows the V$_{\mathrm{OUT}}$results when the I$_{\mathrm{LOAD}}$ value changes from
1 mA to 10 mA with rise and fall times of 10 ns. The overshoot value is 1.83 mV when
I$_{\mathrm{LOAD}}$ decreases from 10 mA to 1 mA. On the other hand, the undershoot
value is 4.68 mV when I$_{\mathrm{LOAD}}$ increases from 1~mA to 10 mA. Also, during
the upper mentioned transition condition, the settling time is 0.177 ${\mu}$s with
3% accuracy. A comparison of the performance with other works is shown in Table 1. Among the reference papers included in Table 1, the proposed LDO shows the lowest PSRR. In order to compare the transient response
of various LDOs, a figure of merit (FOM) = T$_{\mathrm{r}}$(I$_{\mathrm{q}}$/I$_{\mathrm{L,max}}$)
[12] is used to figure out the trade-offs between the maximum load current I$_{\mathrm{L,max}}$,
the quiescent current I$_{\mathrm{q}}$ and the response time T$_{\mathrm{r}}$.
Fig. 7. AC simulation results: (a) Conventional LDO; (b) Proposed LDO.
Fig. 8. Results of simulation PSRR from LDO.
Fig. 9. Results of simulation quiescent current under different load currents.
Fig. 10. Simulated load transient response.
Table 1. Performance comparison
V. CONCLUSIONS
In this paper, a new structure of the feedforward method is proposed to increase PSRR.
A supporting role for the FFA block in reducing the V$_{OUT}$ ripple. Additionally,
by using current sensing to create a zero generator, a stable PM for the overall stability
of LDO is established. The simulated PSRR has a -38 dB enhancement at 100 kHz when
compared to an LDO with no feed-forward amplifier. Finally, the proposed LDO shows
small overshoots and undershoots and demonstrates the outcome of maintaining a constant
output voltage.
ACKNOWLEDGMENTS
This work was supported by Incheon National University Research Grant in 2019,
and the chip fabrication was supported by the IC Design Education Center (IDEC), Korea.
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Bongsu Kim received the B.S. degrees in mechanical engineering from Incheon National
University, Incheon, South Korea, in 2023. Where he is currently pursuing the M.S.
degree in integrated circuit and systems Lab. His research interests include clock
and data recovery circuit in memory interfaces and high-speed wireline transceivers,
low-dropout regulators.
Seung-Myeong Yu received the B.S. and M.S. degree in electronics engineering from
Incheon National University, Incheon, South Korea, in 2019 and 2021, respectively,
where he is currently pursuing the Ph.D. degree in integrated circuits and systems.
His research interests include memory interfaces, high-speed wireline transceivers.
Jongchan An received the B.S. and M.S. degrees in electronics engi-neering from
Incheon National University, Incheon, South Korea, in 2021, 2023, respectively. Where
he is currently pursuing the Ph.D. degree in integrated circuit and systems Lab. He
is currently conducting research on clock generators, clock and data recovery circuit
in memory interfaces and high-speed wireline transceivers.
Gwangmyeong An received the B.S. degrees in electronics engineering from Incheon
National University, Incheon, South Korea, in 2023. Where he is currently pursuing
the M.S. degree in integrated circuit and systems Lab. He is currently conducting
research on clock generators in memory interfaces and high-speed wireline transceivers.
Junyoung Song (S’08, M’14) received the B.S. and M.S. degrees in electronics engineering
and the Ph.D. degree in electrical and computer engineering from Korea University,
Seoul, South Korea, in 2008, 2010, and 2014, respectively. In 2012, he was a Visiting
Scholar with the University of California at Los Angeles, Los Angeles, CA, USA. In
2014, he joined the Analog Serial I/O Group, Intel Corporation, San Jose, CA, where
he was involved in the wireline transceiver design for high-performance FPGA. Since
2018, he has been with the School of Electronics Engineering, Incheon National University,
Incheon, South Korea, where he is currently an Associate Professor. He has coauthored
the book High-Bandwidth Memory Interface (Springer, 2013). His research interests
include the high-speed wireline transceiver, memory, and clock generator. Dr. Song
was a recipient of the Minister of Ministry of Education, Science and Technology Award
at the Korea Semiconductor Design Contest in 2011 and the IEEE Seoul Section Student
Paper Contest Bronze Award in 2011 and 2013. He is serving on the Technical Program
Committee of the IEEE Asian Solid-State Circuits Conference.