I. INTRODUCTION
Plasma is the fourth state of matter; it is a highly reactive mixture of ions, free
radicals and electrons (1). It can be generated by using a strong electromagnetic field or heat to excite neutral
gas (2) and has been applied in various fields (3-6). Fig. 1 shows the plasma treatment applications in soft biomedical areas such as sterilization
(7), coagulation (8), and wound healing (9). These applications require portable plasma generators that operate at atmospheric
pressure and room temperature (10-13). Atmospheric pressure plasma (APP) can be generated without requiring a separate
chamber, and is therefore suitable for use in low-cost, portable devices (14).
Fig. 1. Microwave-excited plasma to biomedical applications.
The characteristics of the APP depend on the excitation frequency of the power source
(15). Microwave-excited APP (${\mu}$-APP) is ignited by a microwave-frequency signal,
and has the great advantage of selectively transferring energy to electrons, which
are less massive than ions or neutrons (16). Therefore, ${\mu}$-APP produces numerous energetic electrons, which generate abundant
reactive species. ${\mu}$-APP is suitable for portable devices because it ignites
at low power (17-20).
The ${\lambda}$/4 coaxial transmission line resonator (CTLR) is the most promising
${\mu}$-APP candidate, because it can be implemented in a small pen-type portable
device (21). In Fig. 2, the ${\lambda}$/4 CTLR receives microwave power through a 50-Ω cable and generates
the ${\mu}$-APP at the open end of a plasma gun. The CTLR has a transmission line
structure that consists of an inner electrode and an outer electrode. The transmission
lines in the open-end and short-end directions act as a capacitor and an inductor,
respectively, so the resonator performs narrow-band peaking. Therefore, the intensity
of microwave becomes maximum at the open end and minimum at the short end, and as
a result create a strong electric field at the open end. However, after the plasma
ignites, the plasma bulk with sheath layer changes the circuit model from an open
circuit to a series connection of a capacitor and a resistor as shown in Fig. 3. Fig. 4 shows a shift of resonance frequency by the plasma ignition. The shift of the resonance
frequency causes an increase in the power needed to sustain the plasma after ignition.
Also, sustaining the plasma under mismatched impedance can cause a large power reflection,
which can reduce the lifetime of the power module.
Fig. 2. Block diagram of the μ-APP generation system.
Fig. 3. Equivalent circuit models of the CTLR before and after plasma ignition.
Fig. 4. Shift of resonance frequency by plasma ignition.
An adaptive resonance frequency tracking loop has been developed (22) to overcome the failure of the impedance matching caused by the plasma ignition.
A palm-sized microwave power module continuously tracks the shift of resonance frequency
and adaptively changes the frequency of the microwave feed. This frequency tracking
scheme greatly reduces the waste of power. In addition, a power regulation loop that
generates stable microwave power regardless of system temperature changes was implemented.
This paper presents a portable ${\mu}$-APP system with a single-chip microwave-excited
plasma driver IC, which includes a resonance-frequency tracking scheme and an output-power
regulation scheme. This work proposes a single-chip CMOS controller IC for microwave
plasma generation. The IC includes a driver amplifier which provides an input power
to an external commercial power amplifier for actual plasma generation. The CTLR is
designed to have a resonance frequency in the 2.4-GHz band. The combined ${\mu}$-APP
system includes a loop that automatically tracks the maximum power efficiency, and
thereby achieves a sufficiently small portable device and a high power efficiency.
II. PROPOSED MICROWAVE-EXCITED PLASMA DRIVER IC
Fig. 5 shows the proposed IC which consists of three main blocks: a frequency-control block
(FCB), a power-regulation block (PRB), and a power-detection block (PDB). The FCB
observes the reflected power that is digitized by the PDB and changes the microwave
frequency to reduce the magnitude of the reflected power. The PRB monitors the power
supplied to the CTLR and adjusts the output level of the power amplifier so that a
constant plasma jet is generated. The PDB samples the forward and reflected power
from the input of the CTLR, converts them to digital data and transfers them to the
FCB and PRB. Because both the frequency control loop and the power regulation loop
are involved in the power delivered to the CTLR, the bandwidths of the two loops should
be carefully designed to ensure system stability. In this work, the frequency control
loop is updated once in every 32 updates of the power regulation loop. An on-chip
regulator receives the 3.3-V voltage and generates a low-noise 1.8-V supply voltage
for all blocks except front-end circuits. The relaxation oscillator in the IC provides
low-speed (< 1 MHz) clocks (CLK$_{1}$, CLK$_{2}$, and CLK$_{\mathrm{ADC}}$) for operation
of digital blocks and ADC. Register banks are controlled by an I$^{2}$C interface
block.
Fig. 5. Block diagram of the proposed microwave-excited plasma driver IC.
1. Frequency Control Block
The FCB uses an LC-based digitally controlled oscillator (LC-DCO) to generate a 2.4-GHz
band microwave signal. Fig. 6 shows the circuit schematic and output frequency range of the 8-bit LC-DCO. The resonant
tank in the DCO consists of an on-chip spiral inductor and a variable capacitor that
takes 8-bit digital input. The LC resonance frequency can be tuned by controlling
the 8-bit digital input $\textit{FREQ[7:0]}$. In order for the FCB to stably lock
to the resonance frequency of CTLR, a 2.4 GHz band LC-DCO was designed to have a tunable
frequency range of 80 MHz with an 8-bit code. Additional band selection capacitors
are also added to cope with nonzero frequency shifts caused by plasma ignition. The
overall frequency range with additional band selection capacitors is 2.28 to 2.53
GHz. The generated microwave signal $\textit{f}$$_{DCO}$ is applied to the input of
the power amplifier through a microwave selection multiplexer (MUX).
Fig. 6. (a) Circuit schematic of the 8-bit LC-DCO, (b) Output frequency range of the
LC-DCO.
A digital comparator in the FCB compares the digitized reflected power $\textit{D}$$_{N}$
at the current frequency with the digitized reflected power $\textit{D}$$_{N-1}$ at
the previous frequency. If $\textit{D}$$_{N}$ ${\geq}$ $\textit{D}$$_{N-1}$, the comparator
output $\textit{UD1}$ = +1; if $\textit{D}$$_{N}$ < $\textit{D}$$_{N-1}$, then $\textit{UD1}$
= -1. The comparator output is applied as an input to an UP/DOWN counter to increase
or decrease $\textit{FREQ[7:0]}$ by 1. The changed counter value is applied to the
8-bit variable capacitor of the LC-DCO so the output frequency is changed by (80/255)
MHz. The FCB receives the new reflected power at the changed frequency and repeats
the comparison process. An UP/DOWN counter acts as an integrating filter to provide
the single dominant pole. Therefore, the loop of the FCB is a first-order system and
unconditionally stable.
If the change in frequency causes an increase in the reflected power, the output of
the comparator has the opposite sign as the previous output. As a result, the output
frequency changes in the direction opposite to the previous change and moves toward
to the minimum point of the reflection coefficient ($\textit{S}$$_{11}$). In the opposite
case, the comparator outputs a value with the same sign, so the output frequency changes
in the same direction as the previous change, and the minimum point is tracked in
the same way. This simple gradient-search algorithm, makes the 8-bit LC-DCO input
converge to the optimal code that minimizes the reflected power.
2. Power Regulation Block
The main function of the PRB is to provide a constant output power to the CTLR regardless
of variation in the power supply or the temperature of the device. In Fig. 7, the microwave signal generated by the FCB is applied to the input of the digitally
power-controllable amplifier (DPA). The microwave selection MUX determines whether
to use of $\textit{f}$$_{DCO}$ or an external microwave signal $\textit{f}$$_{EXT}$,
then applies the chosen microwave signal to the inverter buffer. The buffer amplifies
the signal and adjusts the DC voltage level with an AC-coupling capacitor and resistors.
The adjusted signal is applied to the input of a DPA that consists of 64 cascode cells.
The upper NMOS gate driven is by logic gates, and determines the whether a single
cascode cell is turned on or off. $\textit{ROW[0:7]}$ and $\textit{COL[0:7]}$ control
the output power of the DPA by determining the number of cells that are turned on.
The output terminals of the DPA bear is a choke inductor to supply DC current to the
DPA and passive elements for 50-Ω matching. In Fig. 8, the measured output power of the DPA increases with increase in the number of DPA
cells that are turned on. The measured maximum output power of the DPA is 19.38 dBm
and the minimum output power is -20.73 dBm.
Fig. 7. Circuit schematic of the digitally power-controllable amplifier.
Fig. 8. Measured output power ($\textit{P}$$_{out}$) as a function of 6-bit input
code.
The power regulation loop of the PRB operates such that the effective power $\textit{P}$$_{eff}$
(i.e., forward power minus reflected power), is equal to the target output power.
The digitized effective power $\textit{D}$$_{PWR}$ is received from the digital logic
block of the PDB. A digital comparator in the PRB compares $\textit{D}$$_{PWR}$ with
the digitized target power $\textit{D}$$_{REF}$ value and outputs +1 or -1 ($\textit{UD2}$).
An UP/DOWN counter in the PRB changes the counter value $\textit{PWR[5:0]}$ according
to the $\textit{UD2}$ value, then $\textit{PWR[5:0]}$ is converted to $\textit{ROW[0:7]}$
and $\textit{COL[0:7]}$ values by a ROW/COL decoder. While the loop is active, the
plasma output of the CTLR is regulated.
3. Power Detection Block
Operation of the FCB and PRB requires the reflected power and effective power of the
CTLR. The PDB receives forward and reflected signals as input, then transfers the
digitized reflected power to the FCB and the digitized $\textit{P}$$_{eff}$ to the
PRB. The power detector shown in Fig. 9 is the front-end circuit of the PRB. Two directional couplers outside the IC sample
the signal at the CTLR: one samples the forward power $\textit{P}$$_{FOR}$ and one
samples the reflected power $\textit{P}$$_{REF}$; then the couplers apply these powers
to the power detector. The input ports of the power detector are matched to 50 Ω;
AC coupling capacitors and resistors adjust the DC voltage level. As shown in Fig. 10, the measured output voltage of the power detector increases exponentially with increase
in the input power at 2.4 GHz.
Fig. 9. Circuit schematic of the power detector.
Fig. 10. Measured output voltage ($V_{PD}$) as a function of input power.
The output voltage $\textit{V}$$_{PD}$ of the power detector is converted to a 10-bit
digital value ($\textit{D}$$_{V}$$\textit{[9:0]}$) by an analog-to-digital converter
(ADC) to reduce sensitivity to noise. Fig. 11 and 12 illustrate the block diagram and timing diagram of the implemented 10-bit ADC. For
energy efficiency, the proposed system uses successive approximation architecture
(SAR). An asynchronous dynamic logic block (23) in the ADC receives the ADC clock from the relaxation oscillator and generates timing
logics of internal blocks such as capacitor DAC and comparator. After analog input
is converted, the ADC automatically enters standby state, so the total power consumption
of the ADC is minimized. Fig. 13 shows simulated power detector output and corresponding ADC output when frequency
changes. When the frequency is at the optimum (2.34 GHz), the power detector output
voltage changes only with 0.3 mV/MHz, requiring higher resolution of ADC. To achieve
a lock at the optimum within ${\pm}$5-MHz deviation, the required ADC resolution is
10-bit assuming that ADC input range is 1.8 V. The sampling rate of ADC is designed
to be not more than 1 MHz which should be significantly smaller than the loop bandwidth
of the frequency tracking through the external power amplifier, the CTLR and the IC.
The synthesized digital logic block compares digitized forward and reflected power
to compute the reflection coefficient and $\textit{P}$$_{eff}$, and transfers it to
the FCB and PRB.
Fig. 11. Block diagram of the 10-bit asynchronous SAR ADC.
Fig. 12. Simplified timing diagram of the 10-bit ADC.
Fig. 13. $\textit{P}$$_{REF}$ measurement results of power detector and 10-bit ADC.
III. 2.4-GHZ COAXIAL TRANSMISSION LINE RESONATOR
The CTLR (21) in the proposed system is designed based on the principle of a quarter-wave resonator.
The designed CTLR shown in Fig. 14 consists of an inner electrode and an outer electrode. The outer electrode is connected
to the ground, and the inner electrode is connected to the microwave power so that
an electric field forms between them. The generated electric field excites Argon/Helium
gas that is fed into a small hole of the short-end; the result is a plasma jet.
Fig. 14. 2.4 GHz CTLR for microwave plasma generation.
An equivalent model of the CTLR structure is shown in Fig. 15. The input impedance at the power-feeding port is the parallel sum of impedance $\textit{Z}$$_{L1}$
and impedance $\textit{Z}$$_{L2}$. When the plasma is not generated, the impedance
at the open end is infinite ($\textit{Z}$$_{P}$ =${\infty}$),
Fig. 15. The structure and equivalent model of the CTLR.
and
where Zo is the characteristic impedance of the coaxial transmission line (50 Ω),
j=${\sqrt{}}$(-1), $l_{1}$ is the length of the transmission line from power-feeding
port to the open end, $l_{2}$ is the length of the transmission line from power-feeding
port to short-end, $k={\beta}-{j \alpha}$ is the propagation constant, ${\alpha}$
is the attenuation constant, and ${\beta}={\lambda}/4$ is the phase constant of the
coaxial transmission line. $l_{1}$ and $l_{2}$ of the coaxial transmission lines are
short, so the impedance $\textit{Z}_{L1}$ and $\textit{Z}_{L2}$ can be assumed to
be purely capacitive and purely inductive respectively, so LC resonance results. The
input impedance seen at the microwave power-feeding port is
and by making the total length $l_{1}$ + $l_{2}$ = ${\lambda}$/4, the imaginary part
of the input impedance disappears without any condition. The real part of the input
impedance can be adjusted by locating the power-feeding point at the spot where $\textit{Z}$$_{in}$
matches $\textit{Z}$$_{o}$.
After the ignition, however, $\textit{Z}$$_{P}$ becomes the plasma jet impedance so
that the imaginary part of the $\textit{Z}$$_{in}$ remains. The variation of $\textit{Z}$$_{in}$
causes an increase in the power reflected from the resonator, resulting in a reduction
in the overall power efficiency. To solve this inefficiency, the increase in reflected
power due to this impedance mismatch is detected by the PDB in the plasma driver IC,
and the frequency-tracking loop compensates by changing the microwave output frequency.
IV. IMPLEMENTATION AND MEASUREMENT RESULTS
The proposed IC was implemented using a 0.18-${\mu}$m CMOS process. Fig. 16 shows the microphotograph of the chip. The total area of the IC is 2.1 mm x 1.1 mm.
Compared with the board-level implementation in a size of 90 mm x 120 mm (22), the proposed work enables the miniaturization of system which can bring widespread
use in biomedical applications. Fig. 17 and 18 show the experimental setup of the implemented system. The proposed IC creates a
2.4-GHz band microwave output and provides it to the input of the external power amplifier
(MW7IC2725GN). The power gain of the external power amplifier is 20 dB and the measured
maximum output power was 4.0 W. Two directional couplers (X3C26P1-30S) in the output
path of the external power amplifier sample the forward and reflected power, then
feed them into the IC. A microcontroller (ATmega128) board controls the system through
the I$^{2}$C interface. A prototype of a portable plasma device shown in Fig. 19 mounts the implemented IC and the necessary components on a single PCB. The size
of the prototype including SMA connector is 3.2 cm x 7.9 cm. The DPA and power detector
in the IC operates at 3.3 V and the other blocks operate at 1.8 V generated by the
internal regulator. When CTLE input power is set to 1.0 W, the total power dissipation
of the IC is 127 mW, including 64 mW of DPA power.
Fig. 16. Microphotograph of the implemented IC.
Fig. 17. Block diagram of the experimental setup.
Fig. 18. Measurement setup for the proposed μ-APP generation system.
Fig. 19. Prototype of the portable μ-APP generation system.
1. Plasma Jet Impedance
Generation of plasma changes the impedance of $\textit{Z}$$_{p}$ from an infinite
value to a finite value, so the $\textit{S}$$_{11}$ of the CTLR changes. The input
impedance $\textit{Z}$$_{in}$ at finite $\textit{Z}$$_{p}$ is (20)
and $\textit{S}$$_{11}$ of the CTLR can be theoretically calculated as
where $\textit{Z}$ $_{p}$ = $\textit{R}$$_{p}$ - j$\textit{X}$$_{p}$, $\textit{R}$$_{p}$
is resistive impedance of the plasma jet and $\textit{X}$$_{p}$ is reactive impedance
of the plasma jet. By fitting the theoretically calculated reflection coefficient
and the measured reflection coefficient, resistance and reactance can be estimated.
In Fig. 20, CTLR reflection coefficients were measured in the frequency range from 2.3 to 2.4
GHz at forward powers of 1.0, 1.5, and 2.0 W. The reflection coefficients of the CTLR
were measured using forward and reflected power measured by two directional couplers.
As the power of the plasma jet increased from 1.0 W to 2.0 W, the estimated plasma
impedance decreased and the reflection characteristics of the CTLR degraded. The measured
plasma impedance of the plasma jet is shown in Fig. 21.
Fig. 20. Measurement result of $\textit{S}$$_{11}$ before plasma ignition and after
plasma ignition with forward input power variation.
Fig. 21. Measured resistance and reactance of the plasma jet with forward input power
variation.
2. Frequency Tracking
The plasma jet impedance $\textit{Z}$$_{p}$ decreased as the forward power of the
resonator increased, so that the minimum point of $\textit{S}$$_{11}$ shifted to a
lower frequency. When the frequency tracking mode was activated, the minimum point
of $\textit{S}$$_{11}$ is searched regardless of the initial position of the frequency.
Fig. 22 shows the measured DCO frequency codes before and after the plasma ignition while
the frequency tracking mode was turned on. The DCO code converged to the optimal frequency
code, whether the initial code was far from or near to the optimal code. After the
plasma ignition, the DCO frequency code converged to the shifted optimum frequency
code after the frequency-tracking operation was iterated. After the convergence, the
DCO code had a ripple in the range of ${\pm}$10 from the optimal code, so the locking
range of the microwave frequency was 6.5 MHz; this error is caused by power detector
gain and ADC resolution limitations; it slightly reduced power efficiency but the
overall power efficiency was greatly increased.
Fig. 22. Measured DCO frequency codes while frequency tracking mode is on (Dashed
lines represent the optimal DCO frequency codes).
3. Power-transfer Efficiency
The power-transfer efficiency ($\textit{PT}_{eff}$), which can be calculated as
where $\textit{P}$$_{FOR}$ is forward power in the CTLR and $\textit{P}$$_{REF}$ is
reflected power in the CTLR. Fig. 23 compares the $\textit{PT}_{eff}$ for two cases of frequency control: 1) frequency
fixed at the initial resonance frequency of 2.36 GHz without frequency tracking, and
2) frequency adaptively tuned with the minimum point of $\textit{S}$$_{11}$ tracking
loop. In case 1), the power-transfer efficiency decreased significantly as the forward
input power increased. The 95.2 % power-transfer efficiency before plasma ignition
decreased to 72.1 % when the forward input power was 2.0 W. In case 2), the optimal
frequency was tracked according to the change of the input impedance of the CTLR,
so the power-transfer efficiency was similar to the initial efficiency of 95.1 %.
The measured power-transfer efficiency was 94.8, 94.4, and 92.5 % at forward power
of 1.0, 1.5, and 2.0 W, respectively. The measured performance of the implemented
IC is summarized in Table 1.
Table 1. Performance summary of implemented chip
Process
|
0.18 μm CMOS
|
Output power
|
-20.7 dBm ~ 19.4 dBm
|
Frequency range
|
2.28 GHz ~ 2.53 GHz
|
Power-transfer efficiency
|
94.8 % @ 1.0 W output
|
94.4 % @ 1.5 W output
|
92.5 % @ 2.0 W output
|
Power consumption
|
127 mW @ 3.3 V
|
Chip area
|
2.1 mm × 1.1 mm
|
Fig. 23. Power-transfer efficiency from power module to CTLR with fixed frequency
and frequency tracking.
V. CONCLUSION
This paper presents a portable ${\mu}$-APP system that uses a single-chip microwave
plasma driver IC that has two feedback loops: (1) a resonance-frequency-tracking loop
that tracks the shift of the minimum reflection frequency caused by changes in the
plasma impedance, and (2) an output-power-regulation loop that keeps the intensity
of the plasma jet constant. The resonance frequency tracking scheme finds the minimum
reflection frequency by continuously running a simplified gradient search. The output
power regulation scheme finds a DPA code so that the effective power level would be
a given constant. The power module including the implemented IC and a power amplification
block had a maximum output power of 4.0 W and successfully tracked the shifted optimum
frequency after the plasma formation. The power efficiency of the system with the
frequency tracking scheme was measured at 92.8 %, which is much higher than the 72.6
% efficiency that is achieved when the system is operated at a fixed frequency. The
output power regulation scheme was applied to provide a constant effective power within
${\pm}$ 5 % ripple error. The proposed system is suited for portable low-power biomedical
microwave plasma devices.
ACKNOWLEDGMENTS
This research was supported by the Bio & Medical
Technology Development Program of the National
Research Foundation (NRF) funded by the Korean
government (MSIT) (No. NRF-2015M3A9E2066861).
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Author
Cheolmin Ahn received the B.S.
degree from the School of Computer
Science and Electrical Engineering,
and the M.S. degree from the
Department of Information and
Communication Engineering both
from the Handong Global University,
Pohang, South Korea, in 2012 and 2014, respectively.
He
is currently pursuing the Ph.D. degree in electrical
engineering with the Pohang University of Science and
Technology, Pohang.
His current research interests
include microwave plasma generator, analog integrated
circuit design, and high-speed link.
Soon Ku Kwon received the B.S.
degree form the School of Electronic
Engineering, Soongsil University,
Seoul, South Korea, in 2012, and the
M.S. degree in electrical engineering
from the Pohang University of
Science and Technology, Pohang,
South Korea, in 2014, where he is currently pursuing the
Ph.D. degree in electrical engineering.
His current
research interests include microwave plasma generator,
microwave-excited plasma for biomedical applications,
power module for plasma generation, analog integrated
circuit design, and RFICs.
Bumjin Park received the B.S.
degree from the School of Computer
Science and Electrical Engineering,
and the M.S. degree from the
Department of Electrical Engineering
both from the Pohang University of
Science and Technology, Pohang,
South Korea, in 2014 and 2016, respectively.
He is
currently pursuing the Ph.D. degree in electrical
engineering with the Pohang University of Science and
Technology, Pohang.
His current research interests
include analog integrated circuit design, sensor interface,
and ADC.
Jahyun Koo received the B.S.
degree in Electronic and Electrical
Engineering from Hongik University,
in 2014 and M.S degree in electronic
and electrical engineering from
Pohang University of Science and
Technology (POSTECH), Korea, in
2016.
He is currently pursuing the Ph.D. degree in
electronic and electrical engineering from Pohang
University of Science and Technology (POSTECH),
Korea.
His research interests include relaxation oscillator
and sensor interface circuit
Jae-Yoon Sim received the B.S.,
M.S., and Ph.D. degrees in electronic
and electrical engineering from the
Pohang University of Science and
Technology (POSTECH), Pohang,
South Korea, in 1993, 1995, and
1999, respectively.
From 1999 to
2005, he was a Senior Engineer with Samsung
Electronics, Suwon, South Korea.
From 2003 to 2005, he
was a Post-Doctoral Researcher with the University of
Southern California, Los Angeles, CA, USA.
From 2011
to 2012, he was a Visiting Scholar with the University of
Michigan, Ann Arbor, MI, USA.
In 2005, he joined
POSTECH, where he is currently a Professor.
From 2017
to 2019, he was the Director of the Joint Research Lab,
which is nominated by the Korea Institute of Science and
Technology.
Since 2019, he has been the Director of the
Scalable Quantum Computer Technology Platform
Center, which is an engineering research center
nominated by the Korea Ministry of Science and
Information and Communication Technology (ICT).
His
research interests include sensor interface circuits, highspeed
serial/parallel links, phase-locked loops (PLLs),
data converters, power module for plasma generation,
and quantum computing.
Dr. Sim was a co-recipient of
the Takuo Sugano Award from ISSCC 2001 and a
recipient of the Special Author-Recognition Award from
ISSCC 2013.
He has served on the Technical Program
Committees for the IEEE International Solid-State
Circuits Conference (ISSCC), the Symposium on VLSI
Circuits, and Asian Solid State Circuits Conference.
He
has been an IEEE Distinguished Lecturer since 2018.